|
25L01B |
25L01I |
| Description |
IC 256 X 1 STANDARD SRAM, 1000 ns, PDIP16, Static RAM |
IC 256 X 1 STANDARD SRAM, 1000 ns, CDIP16, Static RAM |
| Is it Rohs certified? |
incompatible |
incompatible |
| package instruction |
DIP, DIP16,.3 |
DIP, DIP16,.3 |
| Reach Compliance Code |
unknow |
unknow |
| ECCN code |
EAR99 |
EAR99 |
| Maximum access time |
1000 ns |
1000 ns |
| JESD-30 code |
R-PDIP-T16 |
R-GDIP-T16 |
| JESD-609 code |
e0 |
e0 |
| memory density |
256 bi |
256 bi |
| Memory IC Type |
STANDARD SRAM |
STANDARD SRAM |
| memory width |
1 |
1 |
| Number of functions |
1 |
1 |
| Number of ports |
1 |
1 |
| Number of terminals |
16 |
16 |
| word count |
256 words |
256 words |
| character code |
256 |
256 |
| Operating mode |
ASYNCHRONOUS |
ASYNCHRONOUS |
| Maximum operating temperature |
70 °C |
70 °C |
| organize |
256X1 |
256X1 |
| Output characteristics |
3-STATE |
3-STATE |
| Exportable |
NO |
NO |
| Package body material |
PLASTIC/EPOXY |
CERAMIC, GLASS-SEALED |
| encapsulated code |
DIP |
DIP |
| Encapsulate equivalent code |
DIP16,.3 |
DIP16,.3 |
| Package shape |
RECTANGULAR |
RECTANGULAR |
| Package form |
IN-LINE |
IN-LINE |
| Parallel/Serial |
PARALLEL |
PARALLEL |
| Peak Reflow Temperature (Celsius) |
NOT SPECIFIED |
NOT SPECIFIED |
| Certification status |
Not Qualified |
Not Qualified |
| Maximum supply voltage (Vsup) |
5.25 V |
5.25 V |
| Minimum supply voltage (Vsup) |
4.75 V |
4.75 V |
| Nominal supply voltage (Vsup) |
5 V |
5 V |
| surface mount |
NO |
NO |
| technology |
MOS |
MOS |
| Temperature level |
COMMERCIAL |
COMMERCIAL |
| Terminal surface |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
| Terminal form |
THROUGH-HOLE |
THROUGH-HOLE |
| Terminal pitch |
2.54 mm |
2.54 mm |
| Terminal location |
DUAL |
DUAL |
| Maximum time at peak reflow temperature |
NOT SPECIFIED |
NOT SPECIFIED |
| Base Number Matches |
1 |
1 |