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M1AFS1500-FGG256YK

Description
Field Programmable Gate Array,
CategoryProgrammable logic devices    Programmable logic   
File Size16MB,294 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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M1AFS1500-FGG256YK Overview

Field Programmable Gate Array,

M1AFS1500-FGG256YK Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
Reach Compliance Codecompliant
JESD-609 codee1
Humidity sensitivity level3
Peak Reflow Temperature (Celsius)250
Programmable logic typeFIELD PROGRAMMABLE GATE ARRAY
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Maximum time at peak reflow temperature30
Revision 2
Extended Temperature Fusion Family of Mixed Signal FPGAs
Features and Benefits
Extended Temperature Tested
Each Device Tested from –55°C to 100°C Junction Temperature
Advanced 130-nm, 7-Layer Metal, Flash-Based CMOS Process
Nonvolatile, Retains Program when Powered Off
Instant On Single-Chip Solution
350 MHz System Performance
User Flash Memory – 4 Mbits to 8 Mbits
– Configurable 16- or 32-Bit Datapath
– 10 ns Access in Read-Ahead Mode
1 Kbit of Additional FlashROM
Up to 12-Bit Resolution and Up to 600 Ksps
Internal 2.56 V or External Reference Voltage
ADC: 30 Scalable Analog Input Channels
High-Voltage Input Tolerance: –10.5 V to +12 V
Current Monitor
and Temperature Monitor Blocks
Up to 10 MOSFET Gate Driver Outputs
– P- and N-Channel Power MOSFET Support
– Programmable 1, 3, 10, 30 µA, and 20 mA Drive Strengths
ADC Accuracy Is Better than 1%
6 Clock Conditioning Circuits (CCCs) with 2 Integrated PLLs
– Phase Shift, Multiply/Divide, and Delay Capabilities
– Frequency: Input 1.5–350 MHz, Output 0.75–350 MHz
Single 3.3 V Power Supply with On-Chip 1.5 V Regulator
Sleep and Standby Low-Power Modes
ISP with 128-Bit AES via JTAG
FlashLock
®
Designed to Secure FPGA Contents
1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation
Bank-Selectable I/O Voltages – Up to 5 Banks per Chip
Single-Ended I/O Standards: LVTTL, LVCMOS
3.3 V / 2.5 V /1.8 V / 1.5 V, 3.3 V PCI / 3.3 V PCI-X, and
LVCMOS 2.5 V / 5.0 V Input
Differential I/O Standards: LVPECL, LVDS, B-LVDS, M-LVDS
– Built-In I/O Registers
– 700 Mbps DDR Operation
Hot-Swappable I/Os
Programmable Output Slew Rate, Drive Strength, and Weak
Pull-Up/Pull-Down Resistor
Pin-Compatible Packages across the Fusion
®
Family
Variable-Aspect-Ratio 4,608-Bit SRAM Blocks (×1, ×2, ×4, ×9, and
×18 organizations available)
True Dual-Port SRAM (except ×18)
Programmable Embedded FIFO Control Logic
ARM Cortex-M1–Enabled
High-Performance Reprogrammable Flash Technology
Low Power Consumption
In-System Programming (ISP) and Security
Advanced Digital I/O
Embedded Flash Memory
Integrated A/D Converter (ADC) and Analog I/O
SRAMs and FIFOs
On-Chip Clocking Support
• I
nternal 100 MHz RC Oscillator (Accurate to 1%)
Crystal Oscillator Support (32 KHz to 20 MHz)
Programmable Real-Time Counter (RTC)
Soft ARM
®
Cortex™- M1 Fusion Devices (M1)
Table 1 • Fusion Extended Temperature Devices
Fusion Devices
ARM
Cortex-M1
*
Devices
System Gates
Tiles (D-flip-flops)
General Information
Secure (AES) ISP
PLLs
Globals
Flash Memory Blocks (2 Mbits)
Total Flash Memory Bits
Memory
FlashROM Bits
RAM Blocks (4,608 bits)
RAM kbits
Analog Quads
Analog Input Channels
Analog and I/Os
Gate Driver Outputs
I/O Banks (+ JTAG)
Maximum Digital I/Os
Analog I/Os
AFS600
M1AFS600
600,000
13,824
Yes
2
18
2
4M
1,024
24
108
10
30
10
5
172
40
AFS1500
M1AFS1500
1,500,000
38,400
Yes
2
18
4
8M
1,024
60
270
10
30
10
5
223
40
Note:
*Refer to the
Cortex-M1
product brief for more information.
† Refer to
Table 2 on page IV
for details.
January 2013
© 2013 Microsemi Corporation
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