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BSS138-7-F

Description
Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size373KB,5 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
Download Datasheet Parametric View All

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BSS138-7-F Overview

Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

BSS138-7-F Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDiodes Incorporated
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time16 weeks
Samacsys Confidence
Samacsys StatusReleased
Samacsys PartID233286
Samacsys Pin Count3
Samacsys Part CategoryUndefined or Miscellaneous
Samacsys Package CategoryOther
Samacsys Footprint NameSOT95P240X110-3N
Samacsys Released Date2017-01-11 16:09:24
Is SamacsysN
Other featuresHIGH RELIABILITY, LOW THRESHOLD
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (Abs) (ID)0.2 A
Maximum drain current (ID)0.2 A
Maximum drain-source on-resistance3.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)8 pF
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
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