EEWORLDEEWORLDEEWORLD

Part Number

Search

UPA1722G

Description
Power Field-Effect Transistor, 9A I(D), 30V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
CategoryDiscrete semiconductor    The transistor   
File Size68KB,8 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

UPA1722G Overview

Power Field-Effect Transistor, 9A I(D), 30V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

UPA1722G Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)9 A
Maximum drain-source on-resistance0.032 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee0
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)36 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1722
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
8
5
1,2,3 ; Source
; Gate
4
5,6,7,8 ; Drain
DESCRIPTION
The
µ
PA1722 is N-Channel MOS Field Effect
Transistor designed for DC/DC converters and power
management applications of notebook computers.
FEATURES
Low on-resistance
1.8 MAX.
Small and surface mount package (Power SOP8)
0.05 MIN.
Built-in G-S protection diode
0.15
Low C
iss
: C
iss
= 980 pF TYP.
+0.10
–0.05
R
DS(on)1
= 21.0 mΩ MAX. (V
GS
= 10 V, I
D
= 4.5 A)
1.44
1
5.37 MAX.
4
6.0 ±0.3
4.4
0.8
R
DS(on)2
= 29.0 mΩ MAX. (V
GS
= 4.5 V, I
D
= 4.5 A)
R
DS(on)3
= 32.0 mΩ MAX. (V
GS
= 4.0 V, I
D
= 4.5 A)
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
µ
PA1722G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
30
±20
±9
±36
2.0
150
–55 to +150
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Gate
Body
Diode
Notes 1.
PW
10
µ
s, Duty Cycle
1 %
2.
Mounted on ceramic substrate of 1200 mm x 2.2 mm
Remark
2
Gate
Protection
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G13890EJ1V0DS00 (1st edition)
Date Published November 1999 NS CP(K)
Printed in Japan
The mark
shows major revised points.
©
1998, 1999
About evc
I want to ask, I want to use evc4.0 to develop wince programs, what software do I need to assist? What knowledge do I need to learn? I am familiar with MFC and Wince environment, please give me some a...
ZXZ2002 Embedded System
The role of Q1
The role of Q1...
eeleader Industrial Control Electronics
Does anyone know where is the best embedded forum on the Internet?
I want to get into embedded systems. What are some good resources and forums? Arm series is best, both embedded and SoC are acceptable....
arvinchang Embedded System
ESP-MP-01 Development Board Firmware
[i=s] This post was last edited by dcexpert on 2016-8-10 14:57 [/i] The latest firmware for the ESP-MP-01 development board (esp8266 v1.8.2, LR v1.1.0), compiled according to the official source code....
dcexpert MicroPython Open Source section
The base noise is rising abnormally---------Urgent, thank you!
Regarding the abnormal rise in base noise, this problem has been bothering me for a long time. I am so anxious, but I don’t know the reason and can’t find a solution. I just looked at the channel link...
luojiajing RF/Wirelessly
Tencent enters the Internet of Things
It is understood that QQ IoT is proposed by Tencent based on the account system and social capabilities, aiming to help hardware companies transform to the Internet and provide users with an open syst...
qq849682862 Talking

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 569  1170  1448  1732  718  12  24  30  35  15 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号