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1200GXHH23

Description
DIODE 1200 A, 4500 V, SILICON, RECTIFIER DIODE, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size129KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

1200GXHH23 Overview

DIODE 1200 A, 4500 V, SILICON, RECTIFIER DIODE, Rectifier Diode

1200GXHH23 Parametric

Parameter NameAttribute value
package instructionO-XEDB-N2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationFAST RECOVERY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-XEDB-N2
Maximum non-repetitive peak forward current20000 A
Number of components1
Phase1
Number of terminals2
Maximum output current1200 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum repetitive peak reverse voltage4500 V
Maximum reverse recovery time8 µs
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Base Number Matches1

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