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DMA366AM

Description
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SSSMINI6-F2-B, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size248KB,2 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

DMA366AM Overview

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SSSMINI6-F2-B, 6 PIN

DMA366AM Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionSMALL OUTLINE, R-PDSO-F6
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 21.36
Maximum collector current (IC)0.08 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-F6
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.125 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Tentative
DMA366AM
Silicon PNP epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For digital circuit
Marking Symbol : R5
Package Code : SSSMini6-F2-B
Absolute Maximum Ratings Ta = 25 °C
Parameter
Collector-base voltage (Emitter open)
Tr1
Collector-emitter voltage (Base open)
Tr2
Collector current
Total power dissipation
*1
Overall
Junction temperature
Storage temperature
DMA366AM
Total pages
page
Internal Connection
6
5
4
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Rating
-50
-50
-80
125
150
-55 to +150
Unit
V
V
mA
mW
°C
°C
R1
Tr 1
R2
R2
R1
2
Tr 2
1
3
Note: 1. *1 Measuring on substrate at 17 mm × 10 mm × 1 mm
Resistance
value
1.
Emitter(Tr1)
2. Emitter(Tr2)
3. Base(Tr2)
R1
R2
2.2
47
Pin name
4.
Collector(Tr2)
5. Base(Tr1)
6.
Collector(Tr1)
Electrical Characteristics Ta = 25 °C ±3 °C
Tr1、Tr2
Parameter
Symbol
Conditions
IC = -10
μA,
IE = 0
IC = -2 mA, IB = 0
VCB = -50 V, IE = 0
VCE = -50 V, IB = 0
VEB = -6 V, IC = 0
VCE = -10 V, IC = -5 mA
IC = -10 mA, IB = -0.5 mA
VCE = -0.2 V, IC = -5 mA
VCE = -5 V, IC = -100
μA
Min
-50
-50
Typ
Max
-0.1
-0.5
-0.2
Unit
V
V
μA
μA
mA
-
V
V
-
Collector-base voltage (Emitter open)
VCBO
*1
VCEO
Collector-emitter voltage (Base open)
 
Collector-base cutoff current (Emitter open)
ICBO
Collector-emitter cutoff current (Base open)
ICEO
Emitter-base cutoff current (Collector open)
IEBO
Forward current transfer ratio
hFE
Collector-emitter saturation voltage
VCE(sat)
Vi(on)
Input voltage
Vi(off)
Input resistance
R1
R1/R2
Resistance ratio
80
-0.25
-1.2
-0.4
-30% 2.2 +30%
0.037
0.047
0.057
Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring
methods for transistors.
2. *1 Pulse measurement
Packing
Embossed type (Thermo-compression sealing) R specification : 10 000 pcs / reel
2010.3.10
2010.9.24
Prepared
Revised
Semiconductor Company, Panasonic Corporation
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