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MMJT9410T1G

Description
NPN Bipolar Power Transistor, SOT-223 (TO-261) 4 LEAD, 1000-REEL
CategoryDiscrete semiconductor    The transistor   
File Size111KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NPN Bipolar Power Transistor, SOT-223 (TO-261) 4 LEAD, 1000-REEL

MMJT9410T1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts4
Manufacturer packaging code0.0318
Reach Compliance Codeunknown
ECCN codeEAR99
Factory Lead Time1 week
Shell connectionCOLLECTOR
Maximum collector current (IC)0.01 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Nominal transition frequency (fT)72 MHz
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