BD135LEADFREE datasheet, PDF - EEWORLD Datasheet

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BD135LEADFREE: DescriptionPower Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size341KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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BD135LEADFREE Overview

Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN

BD135LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
Parts packaging code	SIP
package instruction	TO-126, 3 PIN
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1.5 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN (315)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	190 MHz

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BD135

BD137

BD139

SILICON

NPN TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BD135, BD137,

and BD139 are silicon NPN epitaxial planar transistors

designed for audio amplifier and switching applications.

MARKING: FULL PART NUMBER

TO-126 CASE

MAXIMUM RATINGS:

(TC=25°C unless otherwise noted)

SYMBOL

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Continuous Collector Current

IC

Peak Collector Current

ICM

Continuous Base Current

IB

Peak Base Current

IBM

Power Dissipation (Tmb<70°C)

PD

Power Dissipation (TA=25°C)

PD

Operating and Storage Junction Temperature

TJ, Tstg

Thermal Resistance

Θ

Jmb

Thermal Resistance

Θ

JA

ELECTRICAL

SYMBOL

ICBO

IEBO

BVCEO

VCE(SAT)

VBE(ON)

hFE

fT

BD135

45

BD137

BD139

60

100

60

80

5.0

1.5

2.0

0.5

1.0

8.0

1.25

-65 to +150

10

100

UNITS

V

A

W

°C

°C/W

CHARACTERISTICS:

(TC=25°C unless otherwise noted)

TEST CONDITIONS

MIN

TYP

VCB=30V

VCB=30V (TC=125°C)

VEB=5.0V

IC=30mA (BD135)

45

IC=30mA (BD137)

60

IC=30mA (BD139)

80

IC=500mA, IB=50mA

VCE=2.0V, IC=500mA

VCE=2.0V, IC=5.0mA

40

VCE=2.0V, IC=150mA

63

VCE=2.0V, IC=500mA

25

VCE=5.0V, IC=50mA, f=100MHz

190

BD135-10

BD137-10

BD139-10

MIN

MAX

63

160

MAX

100

10

100

0.5

1.0

250

UNITS

nA

μA

nA

V

MHz

SYMBOL

hFE

TEST CONDITIONS

VCE=2.0V, IC=500mA

BD135-16

BD137-16

BD139-16

MIN

MAX

100

250

R4 (13-March 2014)

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