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BD180G

Description
1.0 A, 80 V PNP Bipolar Power Transistor, TO-225, 500-BLKBX
CategoryDiscrete semiconductor    The transistor   
File Size85KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

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BD180G Overview

1.0 A, 80 V PNP Bipolar Power Transistor, TO-225, 500-BLKBX

BD180G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeTO-225AA
package instructionROHS COMPLIANT, PLASTIC, CASE 77-09, TO-225, 3 PIN
Contacts3
Manufacturer packaging code77-09
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Samacsys DescriptionNULL
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-225AA
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)30 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz

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