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BYWB29-200-E3/45

Description
DIODE 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size121KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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BYWB29-200-E3/45 Overview

DIODE 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

BYWB29-200-E3/45 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeD2PAK
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse current10 µA
Maximum reverse recovery time0.025 µs
Reverse test voltage200 V
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
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