TetraFET
D1027UK.01
METAL GATE RF SILICON FET
MECHANICAL DATA
C
(2 pls)
B
G
(typ)
2
1
H
D
3
P
(2 pls) A
5
4
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
65W – 28V – 226MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
E
(4 pls)
F
I
N
M
O
J
K
• SUITABLE FOR BROAD BAND APPLICATIONS
DRAIN 1
GATE 2
DR
PIN 1
PIN 3
PIN 5
SOURCE (COMMON)
DRAIN 2
GATE 1
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
O
P
Millimetres
19.05
10.77
45°
9.78
5.71
27.94
1.52R
10.16
22.22
0.13
2.72
1.70
5.08
34.03
1.57R
Tol.
0.50
0.13
5°
0.13
0.13
0.13
0.13
0.13
MAX
0.02
0.13
0.13
0.50
0.13
0.08
PIN 2
PIN 4
• LOW C
rss
• SIMPLE BIAS CIRCUITS
Inches
0.75
0.424
45°
0.385
0.225
1.100
0.060R
0.400
0.875
0.005
0.107
0.067
0.200
1.340
0.062R
Tol.
0.020
0.005
5°
0.005
0.005
0.005
0.005
0.005
MAX
0.001
0.005
0.005
0.020
0.005
0.003
• LOW NOISE
• HIGH GAIN – 14 dB MINIMUM
APPLICATIONS
•
Device is a specially selected D1027UK, tested for
compliance to DAB1 specification.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
438W
70V
±20V
30A
–65 to 150°C
200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 02/98
D1027UK.01
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Gate Threshold Voltage
Matching Between Sides
V
GS
= 0
V
DS
= 28V
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
I
D
= 10mA
|
D
= 100mA
V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 5A
V
DS
= V
GS
1
3.6
70
Typ.
Max. Unit
V
18
1
7
mA
m
A
V
mhos
V
GS(th)match
0.1
V
TOTAL DEVICE
G
PS
Common Source Power Gain
Drain Efficiency
Third Order IMD
Fifth Order IMD
Input Return Loss
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
V
DS
= 28V
V
DS
= 28V
h
P
O
= 65W
V
DS
= 28V
I
DQ
= 1A
f
1
= 226.2MHz
f
2
= 226.3MHz
14
36.8
–30
–40
10
360
180
15
dB
%
dBc
dB
pF
pF
pF
PER SIDE
V
GS
= –5V f = 1MHz
V
GS
= 0
V
GS
= 0
f = 1MHz
f = 1MHz
Reverse Transfer Capacitance V
DS
= 28V
* Pulse Test:
Pulse Duration = 300
m
s , Duty Cycle
£
2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case
Max. 0.4°C / W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 02/98
ADI Reference Circuit
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