HVU355TRF-E datasheet, PDF - EEWORLD Datasheet

HVU355TRF-E: Description15V, SILICON, VARIABLE CAPACITANCE DIODE; CategoryDiscrete semiconductor diode; File Size106KB，1 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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HVU355TRF-E Overview

15V, SILICON, VARIABLE CAPACITANCE DIODE

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Renesas Electronics Corporation
Reach Compliance Code	compliant
ECCN code	EAR99
Minimum breakdown voltage	15 V
Configuration	SINGLE
Minimum diode capacitance ratio	2
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
JESD-30 code	R-PDSO-G2
JESD-609 code	e6
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Bismuth (Sn/Bi)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	20

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