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1SS319(F)

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size328KB,3 Pages
ManufacturerKEMET
Websitehttp://www.kemet.com
Download Datasheet Parametric View All

1SS319(F) Overview

Rectifier Diode

1SS319(F) Parametric

Parameter NameAttribute value
MakerKEMET
package instructionR-PDSO-G4
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.6 V
JESD-30 codeR-PDSO-G4
Number of components2
Phase1
Number of terminals4
Maximum operating temperature125 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.225 W
Maximum repetitive peak reverse voltage45 V
Maximum reverse current5 µA
Reverse test voltage40 V
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
1SS319
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS319
Low Voltage High Speed Switching
Small package
Low forward voltage
Low reverse current
:
SC-61
:
I
R
= 5μA (max)
:
V
F
(3) = 0.54V (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
I
O
P
T
j
T
stg
Rating
45
40
300 (*)
100 (*)
150 (*)
125
−55 to 125
Unit
V
V
mA
mA
mW
°C
°C
SMQ
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC−61
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2−3J1A
reliability significantly even if the operating conditions (i.e. operating Weight: 0.013 g (typ.)
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*): Unit rating. Total rating = unit rating
×
1.5.
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
I
R
C
T
Test Condition
I
F
= 1mA
I
F
= 10mA
I
F
= 100mA
V
R
= 40V
V
R
= 0, f = 1MHz
Min
Typ.
0.28
0.36
0.54
18
Max
Unit
0.60
5
25
μ
A
pF
V
Marking
Start of commercial production
1987-06
1
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