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1SS352(TH3PEW,F)

Description
Rectifier Diode, 1 Element, 0.1A, 85V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size337KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

1SS352(TH3PEW,F) Overview

Rectifier Diode, 1 Element, 0.1A, 85V V(RRM), Silicon

1SS352(TH3PEW,F) Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionR-PDSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
applicationFAST RECOVERY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-PDSO-G2
Maximum non-repetitive peak forward current1 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.2 W
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage85 V
Maximum reverse current0.5 µA
Maximum reverse recovery time0.004 µs
Reverse test voltage80 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
1SS352
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS352
Ultra High Speed Switching Application
AEC-Q101 Qualified (Note1)
Small package
Low forward voltage
Small total capacitance
Fast reverse recovery time
:
t
rr
= 1.6ns (typ.)
:
V
F (3)
= 0.98V (typ.)
Unit: mm
Note1: For detail information, please contact to our sales.
:
C
T
= 0.5pF (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P
T
j
T
stg
Rating
85
80
200
100
1
200 (*)
125
−55 to 125
Unit
V
V
mA
mA
A
mW
°C
°C
JEDEC
JEITA
TOSHIBA
1-1E1A
Weight: 0.004g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*): Mounted on a glass epoxy circuit board of 20
×
20mm, pad dimension of 4
×
4mm.
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
Reverse recovery time
I
R (1)
I
R (2)
C
T
t
rr
Test
Circuit
Test Condition
I
F
= 1mA
I
F
= 10mA
I
F
= 100mA
V
R
= 30V
V
R
= 80V
V
R
= 0, f = 1MH
z
I
F
= 10mA, Fig.1
Min
Typ.
0.62
0.75
0.98
0.5
1.6
Max
1.20
0.1
0.5
3.0
4.0
V
Unit
μA
pF
ns
Start of commercial production
1989-10
1
2015-01-09

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