BD14016S datasheet, PDF - EEWORLD Datasheet

BD14016S: Description1.5 A, 80 V PNP Bipolar Power Transistor, 2000-BLKBG; CategoryDiscrete semiconductor The transistor; File Size110KB，4 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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1.5 A, 80 V PNP Bipolar Power Transistor, 2000-BLKBG

Parameter Name	Attribute value
Brand Name	ON Semiconductor
Is it lead-free?	Lead free
package instruction	FLANGE MOUNT, R-PSFM-T3
Manufacturer packaging code	340AS
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	1.5 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	12.5 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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