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U1Q4B42TE24L

Description
DIODE 1 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size24KB,1 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

U1Q4B42TE24L Overview

DIODE 1 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode

U1Q4B42TE24L Parametric

Parameter NameAttribute value
package instructionR-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-PDSO-G4
Maximum non-repetitive peak forward current22 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
Maximum reverse current0.00001 µA
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
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