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DMN10H170SFG-13

Description
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size303KB,6 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
Download Datasheet Parametric View All

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DMN10H170SFG-13 Overview

Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

DMN10H170SFG-13 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time23 weeks
Is SamacsysN
ConfigurationSingle
Maximum drain current (Abs) (ID)8.5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Humidity sensitivity level1
Maximum operating temperature150 °C
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.94 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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