2N3905
2N3905
C
BE
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
40
40
5.0
200
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
2N3905
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©
2001 Fairchild Semiconductor Corporation
2N3905, Rev A
2N3905
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
BL
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CE
= 30 V, V
OB
= 3.0 V
V
CE
= 30 V, V
OB
= 3.0 V
40
40
5.0
50
50
V
V
V
nA
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 1.0 V, I
C
= 0.1 mA
V
CE
= 1.0 V, I
C
= 1.0 mA
V
CE
= 1.0 V, I
C
= 10 mA
V
CE
= 1.0 V, I
C
= 50 mA
V
CE
= 1.0 V, I
C
= 100 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
30
40
50
30
15
150
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.65
0.25
0.40
0.85
0.95
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
h
fe
h
re
h
ie
h
oe
NF
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Small-Signal Current Gain
Voltage Feedback Ratio
Input Impedance
Output Impedance
Noise Figure
V
CE
= 5.0 V, I
C
= 100
µA,
R
S
= 1.0 kΩ,
B
W
= 10 Hz to 15.7 KHz
V
CB
= 5.0 V, f = 1.0 MHz
V
EB
= 0.5 V, f = 1.0 MHz
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
I
C
= 1.0 mA, V
CE
=10 V,
f = 1.0 KHz
2.0
50
0.1
0.5
1.0
200
5.0
8.0
40
5.0
x10
-4
4.5
10
pF
pF
kΩ
µmhos
dB
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay Time
Rise Time
Storage Time
Fall Time
V
CC
= 3.0 V, I
CS
= 10 mA,
I
B1
= 1.0 mA ,V
OB
( off )
= 3.0 V
V
CC
= 3.0 V, I
CS
= 10 mA,
I
B1
= I
B2
= 1.0 mA
35
35
200
60
ns
ns
ns
ns
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
2N3905
PNP General Purpose Amplifier
(continued)
Typical Characteristics
V
CESAT
- COLLECTOR EMITTER VOLTAGE (V)
h
F E
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
250
V
CE
= 1 .0V
125 °C
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
0.2
0.15
0.1
125°C
25 °C
β
= 10
200
150
25 °C
100
- 40 °C
0.05
0
- 40 °C
50
0.1
0.2
0.5 1
2
5
10 20
I
C
- COLLECTOR CURRE NT (mA)
50
100
1
10
100
I
C
- COLLECTOR CURRENT (mA)
200
V
BE( ON)
- BASE EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EM ITTE R VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
0.8
25 °C
Base Emitter ON Voltage vs
Collector Current
1
0.8
- 40 °C
β
= 10
- 40 °C
0.6
0.4
0.2
0
125 °C
0.6
0.4
0.2
0
0.1
25 °C
125 °C
V
CE
= 1V
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
200
1
10
I
C
- COLLECTOR CURRENT (mA)
25
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLE CTOR CURRENT (nA)
100
V
10
CB
Common-Base Open Circuit
Input and Output Capacitance
vs Reverse Bias Voltage
10
C obo
= 25V
CAPACITANCE (pF)
8
6
4
2
0
0.1
C ibo
1
0.1
0.01
25
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
1
REVERSE BIAS VOLTAGE (V)
10
2N3905
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Noise Figure vs Frequency
6
V
CE
= 5.0V
NF - NOISE FIGURE (dB)
5
4
3
2
I C = 1.0 mA, R S = 200Ω
I C = 100
µA,
R S = 200Ω
Noise Figure vs Source Resistance
12
NF - NOISE FIGURE (dB)
10
8
6
4
I C = 100
µA
I C = 1.0 mA
V
CE
= 5.0V
f = 1.0 kHz
1
0
0.1
I C = 100
µA,
R S = 2.0 kΩ
2
0
0.1
1
10
f - FREQUENCY (kHz)
100
1
10
R
S
- SOURCE RESISTANCE (
kΩ
)
100
Switching Times
vs Collector Current
500
ts
Turn On and Turn Off Times
vs Collector Current
500
t off
I
c
10
t on
100
TIME (nS)
100
TIME (nS)
t on
I
B1
=
tf
10
I
B1
= I
B2
=
I
c
10
tr
10
V
BE(OFF)
= 0.5V
t off
I = I =
B1
B2
I
c
10
td
1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
1
1
I
10
- COLLECTOR CURRENT (mA)
100
Power Dissipation vs
Ambient Temperature
1
P
D
- POWER DISSIPATION (W)
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
2N3905
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
_ 4
)
Voltage Feedback Ratio
100
h
ie
- INPUT IMPEDANCE (k
Ω
)
10
Input Impedance
V
CE
= 10 V
f = 1.0 kHz
h
re
- VOLTAGE FEEDBACK RATIO (x10
10
1
1
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
0.1
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
Output Admittance
h
oe
- OUTPUT ADMITTANCE (
µ
mhos)
1000
V
CE
= 10 V
f = 1.0 kHz
h
fe
- CURRENT GAIN
1000
500
Current Gain
V
CE
= 10 V
f = 1.0 kHz
200
100
50
100
20
10
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
10
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
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