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934068614315

Description
MOSFET N-CH 30V 0.9A XQFN3
CategoryDiscrete semiconductor    The transistor   
File Size704KB,14 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
Download Datasheet Parametric View All

934068614315 Overview

MOSFET N-CH 30V 0.9A XQFN3

934068614315 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionCHIP CARRIER, R-PBCC-N3
Reach Compliance Codecompliant
Is SamacsysN
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)0.9 A
Maximum drain-source on-resistance0.47 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PBCC-N3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
GuidelineIEC-60134
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PMZ390UNE
12 March 2015
30 V, N-channel Trench MOSFET
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
3. Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= 4.5 V; T
amb
= 25 °C
V
GS
= 4.5 V; I
D
= 0.9 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-8
-
Typ
-
-
-
Max
30
8
0.9
Unit
V
V
A
Static characteristics
drain-source on-state
resistance
[1]
-
390
470
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
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