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ZVP0535AM1

Description
Small Signal Field-Effect Transistor, 0.05A I(D), 350V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, E-LINE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size34KB,1 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric View All

ZVP0535AM1 Overview

Small Signal Field-Effect Transistor, 0.05A I(D), 350V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, E-LINE PACKAGE-3

ZVP0535AM1 Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
package instructionSMALL OUTLINE, R-PSSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage350 V
Maximum drain current (ID)0.05 A
Maximum drain-source on-resistance10 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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Index Files: 2720  2432  1952  2356  1430  55  49  40  48  29 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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