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BU4507AX

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size49KB,7 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BU4507AX Overview

Transistor

BU4507AX Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codeunknown
Is SamacsysN
Maximum collector current (IC)8 A
ConfigurationSingle
Minimum DC current gain (hFE)4.2
JESD-609 codee3
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)45 W
surface mountNO
Terminal surfaceMatte Tin (Sn)
Base Number Matches1
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
4
4
0.3
0.21
MAX.
1500
800
8
15
45
3.0
-
-
0.45
-
UNIT
V
V
A
A
W
V
A
A
µs
µs
T
hs
25 ˚C
I
C
= 4 A; I
B
= 1 A
f = 16kHz
f = 56kHz
I
Csat
= 4 A; f = 16kHz
I
Csat
= 4 A; f = 56kHz
PINNING - SOT399
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
8
15
4
6
5
45
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
T
hs
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
1
Turn-off current.
August 1998
1
Rev 1.100
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