Philips Semiconductors
Product specification
TOPFET dual high side switch
BUK218-50DY
DESCRIPTION
Monolithic dual channel high side
protected power switch in
TOPFET2 technology assembled in
a 7 pin plastic surface mount
package.
QUICK REFERENCE DATA
SYMBOL
I
L
SYMBOL
PARAMETER
Nominal load current (ISO)
PARAMETER
Continuous off-state supply voltage
Continuous load current
Continuous junction temperature
On-state resistance, T
j
= 25˚C
MIN.
8
MAX.
50
16
150
40
UNIT
A
UNIT
V
A
˚C
mΩ
APPLICATIONS
General purpose switch for driving
automotive lamps, motors,
solenoids, heaters.
V
BG
I
L
T
j
R
ON
FEATURES
Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Overtemperature protection
Load current limiting
Latched overload and
short circuit protection
Overvoltage and undervoltage
shutdown with hysteresis
Off-state open circuit
load detection
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
ESD protection on all pins
Reverse battery, overvoltage
and transient protection
FUNCTIONAL BLOCK DIAGRAM
INPUT 1
BATT
INPUT 2
STATUS
CONTROL &
PROTECTION
CIRCUITS
LOAD 1
GROUND
RG
LOAD 2
Fig.1. Elements of the TOPFET dual HSS with internal ground resistor.
PINNING - SOT427
PIN
1
2
3
4
5
6
7
mb
DESCRIPTION
load 1
ground
input 1
connected to mb
status
input 2
load 2
battery
PIN CONFIGURATION
mb
SYMBOL
B
I1
L1
DUAL
HSTF
I2
S
G
L2
1234567
Fig. 2.
Fig. 3.
CONVENTION
Positive currents flow into pins, except for load and ground pins.
May 2001
1
Rev 1.400
Philips Semiconductors
Product specification
TOPFET dual high side switch
BUK218-50DY
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
BG
I
L
P
D
T
stg
T
j
PARAMETER
Continuous supply voltage
Continuous load current per channel
Total power dissipation
Storage temperature
Continuous junction temperature
1
Reverse battery voltages
2
Continuous reverse voltage
Peak reverse voltage
Application information
R
I
, R
S
External resistors
3
Input and status currents
Continuous input current
Continuous status current
Repetitive peak input current
Repetitive peak status current
Inductive load clamping
E
BL
Non-repetitive clamping energy (one
channel)
δ ≤
0.1, t
p
= 300
µs
δ ≤
0.1, t
p
= 300
µs
V
BG
= 13 V, I
L
= 8 A
T
j
= 150˚C prior to turn-off
-
150
mJ
to limit input, status currents
3.2
-
kΩ
T
mb
≤
135˚C
T
mb
≤
25˚C
CONDITIONS
MIN.
0
-
-
-55
-40
MAX.
50
8
83.3
175
150
UNIT
V
A
W
˚C
˚C
V
GB
V
GB
-
-
16
32
V
V
I
I
I
S
I
I
I
S
-5
-5
-50
-50
5
5
50
50
mA
mA
mA
mA
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
2
UNIT
kV
1
For normal continuous operation. A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates
to protect the switch.
2
Reverse battery voltage is allowed only with external resistors to ensure that the input and status currents do not exceed the limiting values.
The internal ground resistor limits the reverse battery ground current. The connected loads must limit the reverse load currents. Power
is dissipated and the T
j
rating must be observed.
3
To limit currents during reverse battery and transient overvoltages (positive or negative).
May 2001
2
Rev 1.400
Philips Semiconductors
Product specification
TOPFET dual high side switch
BUK218-50DY
THERMAL CHARACTERISTIC
SYMBOL
PARAMETER
Thermal resistance
1
R
th j-mb
Junction to mounting base
per channel
both channels
-
-
2.4
1.2
3
1.5
K/W
K/W
CONDITIONS
MIN.
TYP.
MAX.
UNIT
STATIC CHARACTERISTICS
Limits are at -40˚C
≤
T
mb
≤
150˚C and typicals at T
mb
= 25 ˚C unless otherwise stated
SYMBOL
V
BG
V
BL
V
GL
PARAMETER
Clamping voltages
Battery to ground
Battery to load per channel
Ground to load
2
CONDITIONS
I
G
= 1 mA
I
L
= I
G
= 1 mA
I
L
= 10 mA
I
L
= 10 A; t
p
= 300
µs
Supply voltage
V
BG
Operating range
3
MIN.
45
50
18
20
TYP.
55
55
23
25
MAX.
65
65
28
30
UNIT
V
V
V
V
battery to ground
-
9 V
≤
V
BG
≤
35 V
V
LG
= 0 V
T
mb
= 25˚C
V
BL
= V
BG
T
mb
= 25˚C
one channel on
both channels on
V
BL
= 0.5 V; T
mb
= 85˚C
I
G
= -200 mA; t
p
= 300
µs
V
BG
9 to 35 V
5.5 V
I
L
10 A
5A
t
p7
300
µs
T
j
25˚C
-
-
-
-
30
60
50
100
40
80
60
120
mΩ
mΩ
mΩ
mΩ
5.5
-
35
V
µA
µA
µA
µA
mA
mA
A
Ω
I
B
I
L
I
G
I
L
R
G
Currents
Total quiescent current
4
Off-state load current per
channel
Operating current
Nominal load current
5
Effective internal ground
resistance
6
Resistances per channel
-
-
-
-
-
-
8
40
-
0.1
-
0.1
1.8
3.6
-
75
20
1
10
1
3
6
-
100
R
ON
R
ON
On-state resistance
On-state resistance
150˚C
300
µs
25˚C
150˚C
1
Of the output Power MOS transistors.
2
For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage
is clamped by the device.
3
On-state resistance is increased if the supply voltage is less than 7 V.
4
This is the continuous current drawn from the battery when both inputs are low and includes leakage currents to the loads.
5
Per channel but with both channels conducting. Defined as in ISO 10483-1.
6
Equivalent of the parallel connected resistors for both channels.
7
The supply and input voltage for the R
ON
tests are continuous. The specified pulse duration t
p
refers only to the applied load current.
May 2001
3
Rev 1.400
Philips Semiconductors
Product specification
TOPFET dual high side switch
BUK218-50DY
INPUT CHARACTERISTICS
5.5 V
≤
V
BG
≤
35 V. Limits are at -40˚C
≤
T
mb
≤
150˚C and typicals at T
mb
= 25˚C unless otherwise stated.
SYMBOL
I
I
V
IG
V
IG(ON)
V
IG(OFF)
∆V
IG
I
I(ON)
I
I(OFF)
PARAMETER
Input current
Input clamping voltage
Input turn-on threshold voltage
Input turn-off threshold voltage
Input turn-on hysteresis
Input turn-on current
Input turn-off current
V
IG
= 3 V
V
IG
= 1.2 V
CONDITIONS
V
IG
= 5 V
I
I
= 200
µA
MIN.
20
5.5
-
1.2
0.15
-
12
TYP.
60
7
2.1
1.8
0.3
-
-
MAX.
160
8.5
3
-
0.5
100
-
UNIT
µA
V
V
V
V
µA
µA
OPEN CIRCUIT DETECTION CHARACTERISTICS
An open circuit load on either channel can be detected in the off-state. Refer to
TRUTH TABLE
.
This feature requires external load pull-up to a positive supply voltage via a suitable resistor.
Limits are at -40˚C
≤
T
mb
≤
150˚C and typical is at T
mb
= 25˚C.
SYMBOL
PARAMETER
Open circuit detection
V
LG(OC)
I
B(OC)
Load ground threshold voltage
Supply quiescent current per
OC channel
V
BG
≥
9 V
V
BG
= V
LG
= 16 V
open circuit detected,
other channel off
-I
L(OC)
Load ground current per
channel
t
d(OC)
Status delay time
Application information
R
ext
External load pull-up resistance V
ext
= 5 V
per channel
-
10
-
kΩ
V
LG
= 16 V
V
LG
= 3.5 V
input low to status low
-
-
-
200
22
65
300
40
100
µA
µA
µs
1.5
-
2.5
0.8
3.5
1.5
V
mA
CONDITIONS
MIN.
TYP.
MAX.
UNIT
May 2001
4
Rev 1.400
Philips Semiconductors
Product specification
TOPFET dual high side switch
BUK218-50DY
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40˚C
≤
T
mb
≤
150˚C and typicals at T
mb
= 25˚C. Refer to
TRUTH TABLE
.
SYMBOL
PARAMETER
Undervoltage
V
BG(UV)
∆V
BG(UV)
Low supply threshold voltage
1
Hysteresis
Overvoltage
V
BG(OV)
∆V
BG(OV)
I
BG(OV)
High supply threshold voltage
2
Hysteresis
Operating current per channel
V
BG
= 45 V
35
0.4
-
40
1
1
45
2
2
V
V
mA
2
0.1
4.2
0.5
5.3
1
V
V
CONDITIONS
MIN.
TYP.
MAX.
UNIT
OVERLOAD PROTECTION CHARACTERISTICS
Independent protection per channel. Refer to
TRUTH TABLE
.
5.5 V
≤
V
BG
≤
35 V, limits are at -40˚C
≤
T
mb
≤
150˚C and typicals at T
mb
= 25˚C unless otherwise stated.
SYMBOL
PARAMETER
Overload protection
I
L(lim)
Load current limiting
CONDITIONS
V
BL
= V
BG
; t
p
= 300
µs
V
BG
≥
8 V
V
BG
= 5.5 V
T
mb
≤
125˚C prior to overload
3
for latched protection
4
which determines trip time
5
100
-
150
200
200
500
W
µs
18
15
30
27
42
42
A
A
MIN.
TYP.
MAX.
UNIT
Short circuit load protection
P
D(TO)
T
DSC
Overload power threshold
Characteristic time
Overtemperature protection
T
j(TO)
∆T
j(TO)
Threshold junction temperature
Hysteresis
6
150
3
170
10
190
20
˚C
˚C
1
Undervoltage sensors causes each channel to switch off and reset.
2
Overvoltage sensors causes each output channel to switch off to protect its load.
3
Above this temperature measurement of these parameters is prevented because OT protection may occur prior to SC protection.
4
SC protection for P
D
> P
D(TO)
is latched. Normal operation may only be resumed after the input is toggled low then high again.
Normal operation is maintained as long as P
D
< P
D(TO)
and T
j
< T
j(TO)
.
5
Trip time t
d sc
varies with overload dissipation P
D
according to the
exponential model
formula t
d sc
≈
T
DSC
/ LN[ P
D
/ P
D(TO)
].
6
After cooling below the reset temperature the channel will resume normal operation.
May 2001
5
Rev 1.400
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