Doc No.
TT4-EA-12545
Revision.
2
Product Standards
Transistors with Built-in Resistor
DRC2643T0L
DRC2643T0L
Silicon NPN epitaxial planar type
For digital circuits / Muting
2.9
0.4
0.16
3
Unit: mm
Features
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1
2
Marking Symbol: TU
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
(0.95)(0.95)
1.9
1.5
2.8
1.1
1. Base
2. Emitter
3. Collector
Panasonic
JEITA
Code
Mini3-G3-B
SC-59A
TO-236AA/SOT-23
Absolute Maximum Ratings Ta = 25
C
Parameter
Symbol
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Total power dissipation
Junction temperature
Operating ambient temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PT
Tj
Topr
Tstg
Rating
30
20
5
600
200
150
-40 to +85
-55 to +150
Unit
V
V
V
mA
mW
°C
°C
°C
Internal Connection
B
R
1
C
E
Resistance value
R1
4.7
k
Page 1 of 4
Established : 2010-04-22
Revised
: 2014-03-18
Doc No.
TT4-EA-12545
Revision.
2
Product Standards
Transistors with Built-in Resistor
DRC2643T0L
Electrical Characteristics Ta = 25
C
3
C
Parameter
Symbol
Conditions
Min
30
20
5
1
1
600
80
+30%
Typ
Max
Unit
V
V
V
μA
μA
-
mV
k
Collector-base voltage (Emitter open)
VCBO IC = 10
μA,
IE = 0
Collector-emitter voltage (Base open)
VCEO IC = 1 mA, IB = 0
Emitter-base voltage (Collector open)
VEBO IE = 10
μA,
IC = 0
Collector-base cutoff current (Emitter open)
VCB = 30 V, IE = 0
ICBO
Emitter-base cutoff current (Collector open)
VEB = 5 V, IC = 0
IEBO
*1
VCE = 5 V, IC = 50 mA
hFE
Forward current transfer ratio
Collector-emitter saturation voltage
VCE(sat) IC = 50 mA, IB = 2.5 mA
Input resistance
R1
*2
Ron
VI = 7 V, RL = 1 k,f = 1 kHz
On resistanc
100
-30%
4.7
1.4
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Pulse Test
*2 On resistance test circuit
Page 2 of 4
Established : 2010-04-22
Revised
: 2014-03-18
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