RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
HER101
THRU
HER108
HIGH EFFICIENCY RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
*
*
*
*
*
*
*
Low power loss, high efficiency
Low leakage
Low forward voltage
High current capability
High speed switching
High surge capability
High reliability
DO-41
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.35 gram
.034 (0.9)
DIA.
.028 (0.7)
1.0 (25.4)
MIN.
.205 (5.2)
.166 (4.2)
.107 (2.7)
.080 (2.0)
DIA.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
at T
A
= 50 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance
Typical Thermal Resistance
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage T
A
= 25
o
C
Maximum Full Load Reverse Current
o
Average, Full Cycle .375” (9.5mm) lead length at T
L
= 55 C
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
= -0.25A
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
3. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
SYMBOL
V
F
HER101 HER102 HER103 HER104 HER105 HER106 HER107 HER108 UNITS
Volts
1.0
1.3
1.7
5.0
I
R
100
trr
50
75
uAmps
nSec
2005-1
REV:A
uAmps
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
R
θ
JA
R
θ
JC
T
J
, T
STG
15
60
18
-55 to + 150
HER101 HER102 HER103 HER104 HER105 HER106 HER107 HER108 UNITS
50
35
50
100
70
100
200
140
200
300
210
300
1.0
30
12
0
400
280
400
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
pF
C/W
C/W
0
0
C
RATING AND CHARACTERISTIC CURVES ( HER101 THRU HER108 )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
+0.5A
(-)
AVERAGE FORWARD CURENT, (A)
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
2.0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
(+)
25 Vdc
(approx)
(-)
D.U.T
0
PULSE
GENERATOR
(NOTE 2)
-0.25A
1.0
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
-1.0A
NOTES:
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
1cm
SET TIME BASE FOR
10/20 ns/cm
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE (
)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT, (uA)
INSTANTANEOUS FORWARD CURRENT, (A)
10
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
0V
V
200
40
0/
0/
30
1.0
TJ = 25
.1
50
/ 10
TJ = 100
.1
.01
TJ = 25
Pulse Width = 300uS
1% Duty Cycle
.01
0
20
40
60
80
100
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
120
140
.001
0
.2
.4
.6
.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, (A)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
50
8.3ms Single Half Sine-Wave
(JEDEC Method)
200
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0 2 4
10 20 40
REVERSE VOLTAGE, ( V )
100
TJ = 25
HE
R10
1~H
40
30
20
10
0
1
2
20 40
4
6 8 10
NUMBER OF CYCLES AT 60Hz
100
60
0
/8
ER
00
/
HER
105
106
10
~HE
R10
8
10
RECTRON
00
TJ = 150
1.0
V
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