74HC30; 74HCT30
8-input NAND gate
Rev. 6 — 27 December 2012
Product data sheet
1. General description
The 74HC30; 74HCT30 is an 8-input NAND gate. Inputs include clamp diodes. This
enables the use of current limiting resistors to interface inputs to voltages in excess of
V
CC
.
2. Features and benefits
Complies with JEDEC standard JESD7A
Input levels:
For 74HC30: CMOS level
For 74HCT30: TTL level
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
Multiple package options
Specified from
40 C
to +85
C
and from
40 C
to +125
C
3. Ordering information
Table 1.
Ordering information
Package
Temperature range Name
74HC30N
74HCT30N
74HC30D
74HCT30D
74HC30DB
74HCT30DB
74HC30PW
74HCT30PW
40 C
to +125
C
TSSOP14
40 C
to +125
C
SSOP14
40 C
to +125
C
SO14
plastic small outline package; 14 leads;
body width 3.9 mm
plastic shrink small outline package; 14 leads; body
width 5.3 mm
plastic thin shrink small outline package; 14 leads;
body width 4.4 mm
SOT108-1
SOT337-1
SOT402-1
40 C
to +125
C
DIP14
Description
plastic dual in-line package; 14 leads (300 mil)
Version
SOT27-1
Type number
NXP Semiconductors
74HC30; 74HCT30
8-input NAND gate
4. Functional diagram
1
2
3
4
5
6
11
12
A
B
C
D
E
F
G
H
mna488
1
2
3
Y
8
4
5
6
11
12
&
8
mna489
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
A
B
C
D
Y
E
mna490
F
G
H
Fig 3.
Logic diagram
74HC_HCT30
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 27 December 2012
2 of 16
NXP Semiconductors
74HC30; 74HCT30
8-input NAND gate
5. Pinning information
5.1 Pinning
74HC30
74HCT30
A
B
C
D
E
F
GND
1
2
3
4
5
6
7
001aal790
14 V
CC
13 n.c.
12 H
11 G
10 n.c.
9
8
n.c.
Y
Fig 4.
Pin configuration DIP14, SO14 and (T)SSOP14
5.2 Pin description
Table 2.
Symbol
A
B
C
D
E
F
GND
Y
n.c.
n.c.
G
H
n.c.
V
CC
Pin description
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Description
data input
data input
data input
data input
data input
data input
ground (0 V)
data output
not connected
not connected
data input
data input
not connected
supply voltage
74HC_HCT30
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 27 December 2012
3 of 16
NXP Semiconductors
74HC30; 74HCT30
8-input NAND gate
6. Functional description
Table 3.
Input
A
L
X
X
X
X
X
X
X
H
[1]
Function table
[1]
Output
B
X
L
X
X
X
X
X
X
H
C
X
X
L
X
X
X
X
X
H
D
X
X
X
L
X
X
X
X
H
E
X
X
X
X
L
X
X
X
H
F
X
X
X
X
X
L
X
X
H
G
X
X
X
X
X
X
L
X
H
H
X
X
X
X
X
X
X
L
H
Y
H
H
H
H
H
H
H
H
L
H = HIGH voltage level; L = LOW voltage level; X = don’t care.
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
Parameter
supply voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
DIP14 package
SO14, (T)SSOP14 packages
[1]
[2]
[2]
[2]
Conditions
V
I
<
0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
0.5
V or V
O
> V
CC
+ 0.5 V
0.5
V < V
O
< V
CC
+ 0.5 V
[1]
[1]
Min
0.5
-
-
-
-
50
65
-
-
Max
+7
20
20
25
50
-
+150
750
500
Unit
V
mA
mA
mA
mA
mA
C
mW
mW
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For DIP14 package: P
tot
derates linearly with 12 mW/K above 70
C.
For SO14 package: P
tot
derates linearly with 8 mW/K above 70
C.
For (T)SSOP14 packages: P
tot
derates linearly with 5.5 mW/K above 60
C.
74HC_HCT30
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 27 December 2012
4 of 16
NXP Semiconductors
74HC30; 74HCT30
8-input NAND gate
8. Recommended operating conditions
Table 5.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V)
Symbol Parameter
V
CC
V
I
V
O
T
amb
t/V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
Conditions
Min
2.0
0
0
40
-
-
-
74HC30
Typ
5.0
-
-
-
-
1.67
-
Max
6.0
V
CC
V
CC
+125
625
139
83
Min
4.5
0
0
40
-
-
-
74HCT30
Typ
5.0
-
-
-
-
1.67
-
Max
5.5
V
CC
V
CC
+125
-
139
-
V
V
V
C
ns/V
ns/V
ns/V
Unit
9. Static characteristics
Table 6.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
74HC30
V
IH
HIGH-level
input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
I
O
=
20 A;
V
CC
= 2.0 V
I
O
=
20 A;
V
CC
= 4.5 V
I
O
=
20 A;
V
CC
= 6.0 V
I
O
=
4.0
mA; V
CC
= 4.5 V
I
O
=
5.2
mA; V
CC
= 6.0 V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 20
A;
V
CC
= 2.0 V
I
O
= 20
A;
V
CC
= 4.5 V
I
O
= 20
A;
V
CC
= 6.0 V
I
O
= 4.0 mA; V
CC
= 4.5 V
I
O
= 5.2 mA; V
CC
= 6.0 V
I
I
I
CC
input leakage
current
supply current
V
I
= V
CC
or GND;
V
CC
= 6.0 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 6.0 V
-
-
-
-
-
-
-
0
0
0
0.15
0.16
-
-
0.1
0.1
0.1
0.26
0.26
0.1
2.0
-
-
-
-
-
-
-
0.1
0.1
0.1
0.33
0.33
1
20
-
-
-
-
-
-
-
0.1
0.1
0.1
0.4
0.4
1
40
V
V
V
V
V
A
A
1.9
4.4
5.9
3.98
5.48
2.0
4.5
6.0
4.32
5.81
-
-
-
-
-
1.9
4.4
5.9
3.84
5.34
-
-
-
-
-
1.9
4.4
5.9
3.7
5.2
-
-
-
-
-
V
V
V
V
V
1.5
3.15
4.2
-
-
-
1.2
2.4
3.2
0.8
2.1
2.8
-
-
-
0.5
1.35
1.8
1.5
3.15
4.2
-
-
-
-
-
-
0.5
1.35
1.8
1.5
3.15
4.2
-
-
-
-
-
-
0.5
1.35
1.8
V
V
V
V
V
V
Conditions
Min
25
C
Typ
Max
40 C
to +85
C 40 C
to +125
C
Unit
Min
Max
Min
Max
74HC_HCT30
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 27 December 2012
5 of 16
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