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AT25DL161-MHN-Y

Description
flash 16m, 1.65v, 100mhz serial flash
Categorysemiconductor    Other integrated circuit (IC)   
File Size2MB,58 Pages
ManufacturerAll Sensors
Environmental Compliance  
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AT25DL161-MHN-Y Overview

flash 16m, 1.65v, 100mhz serial flash

AT25DL161-MHN-Y Parametric

Parameter NameAttribute value
ManufactureAdesto Technologies
Product CategoryFlash
Data Bus Width8 bi
Memory TypeFlash
Memory Size16 Mbi
ArchitectureFlexible, Uniform Erase
Timing TypeSynchronous
Interface TypeSPI
Supply Voltage - Max1.95 V
Supply Voltage - Mi1.65 V
Maximum Operating Curre20 mA
Operating Temperature- 40 C to + 85 C
Mounting StyleSMD/SMT
Package / CaseUDFN-8
PackagingTray
Factory Pack Quantity490
AT25DL161
16-Mbit, 1.65V Minimum SPI Serial Flash Memory
with Dual-I/O Support
DATASHEET
Features
Single 1.65V – 1.95V supply
Serial Peripheral Interface (SPI) compatible
Supports SPI Modes 0 and 3
Supports RapidS
operation
Supports Dual-Input Program and Dual-Output Read
100MHz for RapidS
85MHz for SPI
Clock-to-output time (t
V
) of 5ns maximum
Uniform 4KB, 32KB, and 64KB Block Erase
Full Chip Erase
32 sectors of 64KB each
Very high operating frequencies
Flexible, optimized erase architecture for code + data storage applications
Individual sector protection with Global Protect/Unprotect feature
Hardware controlled locking of protected sectors via WP pin
Sector Lockdown with permanent freeze option
Make any combination of 64KB sectors permanently read-only
64 bytes factory preprogrammed, 64 bytes user programmable
Byte/Page Program (1 to 256 bytes)
1.0ms typical Page Program (256 bytes) time
50ms typical 4KB Block Erase time
250ms typical 32KB Block Erase time
550ms typical 64KB Block Erase time
128-byte, One-Time Programmable (OTP) Security Register
Flexible programming
Fast program and erase times
Program and Erase Suspend/Resume
Automatic checking and reporting of erase/program failures
Software controlled reset
JEDEC Standard Manufacturer and Device ID Read Methodology
Low power dissipation
10mA Active Read current (typical at 20MHz)
8μA Deep Power-Down current (typical)
Endurance: 100,000 program/erase cycles
Data retention: 20 years
Complies with full industrial temperature range
Industry standard green (Pb/halide-free/RoHS-compliant) package options
8-lead SOIC (0.150" wide)
8-pad Ultra-thin DFN (5 x 6 x 0.6mm)
8-ball dBGA (WLCSP)
8795F–DFLASH–1/2013

AT25DL161-MHN-Y Related Products

AT25DL161-MHN-Y AT25DL161-SSHN-T AT25DL161-MHN-T
Description flash 16m, 1.65v, 100mhz serial flash flash 16m, 1.65v, 100mhz serial flash flash 16m, 1.65v, 100mhz serial flash
Manufacture Adesto Technologies Adesto Technologies Adesto Technologies
Product Category Flash Flash Flash
Data Bus Width 8 bi 8 bi 8 bi
Memory Type Flash Flash Flash
Memory Size 16 Mbi 16 Mbi 16 Mbi
Architecture Flexible, Uniform Erase Flexible, Uniform Erase Flexible, Uniform Erase
Timing Type Synchronous Synchronous Synchronous
Interface Type SPI SPI SPI
Supply Voltage - Max 1.95 V 1.95 V 1.95 V
Supply Voltage - Mi 1.65 V 1.65 V 1.65 V
Maximum Operating Curre 20 mA 20 mA 20 mA
Operating Temperature - 40 C to + 85 C - 40 C to + 85 C - 40 C to + 85 C
Mounting Style SMD/SMT SMD/SMT SMD/SMT
Package / Case UDFN-8 SOIC-8 UDFN-8
Packaging Tray Reel Reel
Factory Pack Quantity 490 4000 6000
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