Operating Temperature Range .......................... -40NC to +85NC
Operating Junction Temperature (Note 2) ......................+110NC
Storage Temperature Range............................ -65NC to +150NC
Soldering Temperature (reflow) (Note 3) ........................+260NC
Note 1:
LX has internal clamp diodes to PGND and IN. Do not exceed the power dissipation limits of the device when forward
biasing these diodes.
Note 2:
Limit the junction temperature to +110NC for continuous operation at full current.
Note 3:
The WLP package is constructed using a unique set of package techniques that impose a limit on the thermal profile the
device can be exposed to during board-level solder attach and rework. This limit permits only the use of the solder pro-
files recommended in the industry-standard specification JEDEC 020A, paragraph 7.6, Table 3 for IR/VPR and convection
reflow. Preheating is required. Hand or wave soldering is not allowed.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 4)
WLP
Junction-to-Ambient Thermal Resistance (q
JA
) .......31.5°C/W
Note 4:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
ELECTRICAL CHARACTERISTICS
(V
IN
= 5V, C
SS
= 4.7nF, T
A
= T
J
= -40NC to +85NC. Typical values are at T
A
= +25NC, unless otherwise noted.) (Note 4)
PARAMETER
IN Voltage Range
IN Shutdown Supply Current
IN Supply Current
V
IN
Undervoltage Lockout Threshold
V
IN
Undervoltage Lockout Hysteresis
ERROR AMPLIFIER
Transconductance
Voltage Gain
FB Set-Point Accuracy
FB Input Bias Current
COMP to Current-Sense
Transconductance
COMP Clamp Low
Compensation RAMP Valley
POWER SWITCHES
High-Side Switch Current-Limit
Threshold
Low-Side Switch Sink
Current-Limit Threshold
Low-Side Switch Source
Current-Limit Threshold
2
SYMBOL
V
IN
V
EN
= 0V
I
IN
CONDITIONS
MIN
2.7
TYP
0.3
3.4
2.6
200
1.4
90
MAX
5.5
3
6
2.7
UNITS
V
FA
mA
V
mV
mS
dB
V
EN
= 5V, V
FB
= 0.75V, not switching
LX starts switching, V
IN
rising
LX stops switching, V
IN
falling
g
MV
A
VEA
V
FB
I
FB
G
MOD
V
FB
= 0.75V
Over line, load, and temperature
594
-100
600
606
+100
mV
nA
A/V
V
V
25
0.93
1
I
HSCL
14
14
14
A
A
A
Maxim Integrated
MAX15108A
High-Efficiency, 8A, Current-Mode
Synchronous Step-Down Switching Regulator
ELECTRICAL CHARACTERISTICS (continued)
(V
IN
= 5V, C
SS
= 4.7nF, T
A
= T
J
= -40NC to +85NC. Typical values are at T
A
= +25NC, unless otherwise noted.) (Note 4)
PARAMETER
LX Leakage Current
RMS LX Output Current
OSCILLATOR
Switching Frequency
Maximum Duty Cycle
Minimum Controllable On-Time
ENABLE
EN Input High Threshold Voltage
EN Input Low Threshold Voltage
EN Input Leakage Current
SOFT-START, PREBIAS
Soft-Start Current
SS Discharge Resistance
SS Prebias Mode Stop Voltage
HICCUP
Number of Consecutive
Current-Limit Events to Hiccup
Timeout
POWER-GOOD OUTPUT
PGOOD Threshold
PGOOD Threshold Hysteresis
PGOOD V
OL
PGOOD Leakage
THERMAL SHUTDOWN
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
Temperature falling
+160
25
NC
NC
FB rising
FB falling
I
PGOOD
= 5mA, V
FB
= 0.5V
V
PGOOD
= 5V, V
FB
= 0.75V
0.54
0.56
25
22
100
1
0.58
V
mV
mV
FA
8
1024
Events
Clock
Cycles
I
SS
R
SS
V
SS
= 0.45V, sourcing
I
SS
= 10mA, sinking
SS rising
10
8.5
0.58
FA
I
V
V
EN
rising
V
EN
falling
V
EN
= 5V
1.3
0.4
1
V
V
FA
f
SW
D
MAX
850
1000
94
100
1150
kHz
%
ns
SYMBOL
V
EN
= 0V
8
CONDITIONS
MIN
TYP
MAX
10
UNITS
FA
A
Note 5:
Specifications are 100% production tested at T
A
= +25NC. Limits over the operating temperature range are guaranteed by
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