DATA SHEET
ZENER DIODES
RD2.0F to RD82F
ZENER DIODES
1 W DO-41 GLASS SEALED PACKAGE
DESCRIPTION
NEC type RD∗∗F Series are DHD (Double Heatsink Diode)
Construction planar type zener diodes possessing an allowable
power dissipation of 1 watt.
PACKAGE DIMENSIONS
(Unit: mm)
φ
0.8
FEATURES
• DHD (Double Heatsink Diode) Construction
• Planar process
• V
Z
: Applied E24 standard
• DO-41 Glass sealed package
φ
3.0 MAX.
Circuits for,
Constant Voltage, Constant Current,
Wave form clipper, Surge absorber, etc.
MAXIMUM RATINGS (T
A
= 25°C)
°
Power Dissipation (P)
Forward Current (I
F
)
Junction Temperature (T
j
)
Storage Temperature (T
stg
)
Peak Reverse Power (P
RSM
)
1 W (See Fig. 1)
200 mA
175°C
−65
to +175°C
See Fig. 9
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13936EJ3V0DS00 (3rd edition)
(Previous No. SC-1007A)
Date Published June 2000 N CP(K)
Printed in Japan
25 MIN.
APPLICATIONS
5 MAX.
Cathode
indication
25 MIN.
©
1982
RD2.0F to RD82F
Type Number
Suffix
RD13F
B
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B
B
B
B
B
B
B
B
MIN.
12.19
12.63
13.11
13.55
14.05
14.52
14.98
15.44
15.89
16.37
17.03
17.64
18.26
18.93
19.59
20.45
21.10
21.75
22.44
23.17
23.90
24.63
25.70
26.72
27.43
28.64
29.57
30.35
31.49
32.39
33.24
34.26
35.19
36.11
37.14
38.13
40
44
48
53
58
64
70
77
Zener Voltage
Note 1
V
Z
(V)
MAX.
12.85
13.30
13.83
14.28
14.77
15.26
15.75
16.23
16.71
17.27
17.91
18.55
19.21
19.91
20.84
21.51
22.18
22.86
23.59
24.36
25.14
26.10
27.12
28.43
29.09
30.10
31.26
31.97
33.06
34.15
34.94
36.01
37.01
38.00
39.04
40.80
45
49
54
60
66
72
79
87
I
Z
(mA)
20
Dynamic Impedance
Note 2
Z
Z
(Ω)
MAX.
10
I
Z
(mA)
20
Reverse Current
I
R
(
µ
A)
MAX.
10
V
R
(V)
10
RD15F
B
20
10
20
10
11
RD16F
B
20
12
20
10
12
RD18F
B
20
12
20
10
13
RD20F
B
20
14
20
10
15
RD22F
B
10
14
10
10
17
RD24F
B
10
16
10
10
19
RD27F
B
10
16
10
10
21
RD30F
B
10
18
10
10
23
RD33F
B
10
18
10
10
25
RD36F
B
10
20
10
10
27
RD39F
RD43F
RD47F
RD51F
RD56F
RD62F
RD68F
RD75F
RD82F
B
10
10
10
10
10
10
10
10
10
20
50
50
50
50
50
70
90
90
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
30
33
36
39
43
47
52
57
63
Note 1.
2.
Tested with pulse (40 ms).
Z
Z
is measured at I
Z
given an very small A.C. Current Signal.
Data Sheet D13936EJ3V0DS00
3
RD2.0F to RD82F
TYPICAL CHARACTERISTICS (T
A
= 25°C)
°
Fig. 1 P-T
A
RATING
1.2
1.0
Power Dissipation P (W)
0.8
0.6
0.4
0.2
= 20 mm
10 mm
5 mm
Fig. 2 I
Z
-V
Z
CHARACTERISTIC
T
A
= 25°C
Zener Voltage V
Z
(V)
TYP.
15
10
5
RD15F
RD12F
RD10F
RD8.2F
RD7.5F
RD6.8F
RD6.2F
RD5.1F
RD4.7F
RD3.9F
RD3.3F
RD2.7F
RD2.0F
I
F
(mA)
600
400
200
0 0.5 1.0
V
Z
(V)
40
80
120
160
200
240
0
20
40 60
80 100 120 140 160 180 200
Ambient Temperature T
A
(°C)
Fig. 3 I
Z
-V
Z
CHARACTERISTIC
T
A
= 25°C
TYP.
Zener Voltage V
Z
(V)
40 35 30 25
20 15
1000
800
600
400
200
0 0.5 1.0
V
F
(V)
Zener Current I
Z
(mA)
Fig. 4 I
Z
-V
Z
CHARACTERISTIC
T
A
= 25°C
Zener Voltage V
Z
(V)
TYP.
100 90 80 70 60 50 40
I
F
(mA)
I
F
(mA)
600
400
200
0 0.5
2
V
F
(V)
4
6
8
10
12
14
16
18
20
22
RD39F
RD36F
20
RD33F
RD30F
40
RD27F
RD24F
RD22F
60
RD20F
RD18F
RD15F P
MAX.
80
RD82F
RD75F
RD68F
RD62F
RD56F
RD51F
RD47F
RD43F
P
MAX.
Fig. 5
γ
Z
-V
Z
CHARACTERISTIC
V
Z
−
Temperature Coefficiency
γ
Z
(%/°C)
V
Z
−
Temperature Coefficiency
γ
Z
(%/°C)
0.1
0.08
0.06
0.04
0.02
0
−0.02
−0.04
−0.06
−0.08
0
4
8 12 16 20 24 28 32 36 40 44
Zener Voltage V
Z
(V)
%/°C
mV/°C
40
32
24
16
8
0
−8
−16
−24
−32
−40
V
Z
−
Temperature Coefficiency
γ
Z
(mV/°C)
Fig. 6
γ
Z
-V
Z
CHARACTERISTIC
V
Z
−
Temperature Coefficiency
γ
Z
(mV/°C)
0.1
%/°C
Zener Current I
Z
(mA)
Zener Current I
Z
(mA)
120
100
80
60
40
0.09
0.08
mV/°C
0.07
0.06
40
50
60
70
80
90
Zener Voltage V
Z
(V)
4
Data Sheet D13936EJ3V0DS00
RD2.0F to RD82F
Fig. 7 Z
Z
-I
Z
CHARACTERISTIC
1 000
Dynamic Inpedance Z
Z
(Ω)
T
A
= 25°C
TYP.
240
Fig. 8 R
th
-S CHARACTERISTIC
Thermal Resistance R
th
(°C/W)
RD6.8F
RD2.0F
RD39F RD82F
Junction to ambient
200
160
120
80
40
= 5 mm
10 mm
S
(Thickness = 0.035 mm)
100
RD
10
6.2
F
RD
4
RD7.
5
F
RD
5.6
.3F
1
RD10F
RD15F
RD15
F
R
D20F
F
RD
5.1
F
20 mm
0.1
RD6.8F
RD6.2F
RD7.5F RD10F
1
10
Zener Current I
Z
(mA)
100
0
20
40
60
80
100
Size of PC Board S (mm
2
)
Fig. 9 P
RSM
RATING
10 000
P
RSM
T
A
= 25°C
Non-
Repetitive
Fig. 11 POWER DISSIPATION NOMOGRAM
Peak Reverse Power P
RSM
(W)
t
1 000
Heat
−Sink
Heat
−Sink
100
(incn)
10
(mm)
30
25
20
1.5
1.0
1
10
µ
100
µ
1m
Time t (s)
10 m
100 m
1
5/8
15
10
3/8
Fig. 10 Z
th
CHARACTERISTIC
2/8
Transient Thermal Impedance Z
th
(°C/W)
1 000
150°C/W
100
9
8
7
6
5
4
25
35
45
55
65
75
85
95
105
115
125
1.0
0.9
0.8
0.7
0.6
10
3
Lead Length
(mm)
1/8
0.5
135
0.4
145
Heat-Sink Power Dissipation
P (W)
Temperature
T
H
(°C)
1
0.1
1m
10 m
100 m 1
Time t (s)
10
100
Data Sheet D13936EJ3V0DS00
5
Microcontroller MCU
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