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AOB20C60

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size264KB,6 Pages
ManufacturerAlpha & Omega Semiconductor
Websitehttp://www.aosmd.com/about
Environmental Compliance
Download Datasheet Parametric View All

AOB20C60 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

AOB20C60 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid114036026
package instruction,
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)20 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)463 W
surface mountYES
AOT20C60/AOB20C60/AOTF20C60
600V,20A N-Channel MOSFET
General Description
The AOT20C60 & AOB20C60 & AOTF20C60 are
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low R
DS(on)
, C
iss
and C
rss
along
with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
Product Summary
V
DS
@ T
j,max
I
DM
R
DS(ON),max
Q
g,typ
E
oss
@ 400V
700
145A
< 0.25Ω
52nC
8.5µJ
100% UIS Tested
100% R
g
Tested
For Halogen Free add "L" suffix to part number:
AOT20C60L & AOB20C60L & AOTF20C60L
Top View
TO-220
TO-220F
TO-263
D
2
PAK
D
D
D
G
AOT20C60
S
AOTF20C60
G
D
S
AOB20C60
S
G
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
AOT20C60/AOB20C60
Parameter
Symbol
Drain-Source Voltage
600
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C,J
C,J
G
C
AOTF20C60
Units
V
V
V
GS
T
C
=25°
C
T
C
=100°
C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
463
3.7
20
11
±30
20*
11*
145
20
200
1470
100
20
50
0.4
-55 to 150
300
AOT20C60/AOB20C60
65
0.5
0.27
AOTF20C60
65
--
2.5
A
A
mJ
mJ
V/ns
W
W/
o
C
°
C
°
C
Units
°
C/W
°
C/W
°
C/W
Repetitive avalanche energy
Single pulsed avalanche energy
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
T
C
=25°
C
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
T
J
, T
STG
Maximum lead temperature for soldering
T
L
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient
A,D
R
θJA
A
Maximum Case-to-sink
R
θCS
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
Rev.2.0 July 2013
www.aosmd.com
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