UNISONIC TECHNOLOGIES CO., LTD
81CXXX/81NXXX
VOLTAGE DETECTORS
WITH BUILT-IN DELAY
DESCRIPTION
The UTC
81CXXX
and
81NXXX
series are good
performance voltage detector and manufactured by CMOS
technologies with highly accurate, low power consumption.
A delay circuit is built-in to each detector, therefore,
peripherals are unnecessary and high density mounting is
possible. Detect voltage is extremely accurate with minimal
temperature drift. Both CMOS and N-channel open drain
output configurations are available.
SOT-89
1
CMOS IC
1
TO-92
3
1
2
FEATURES
*Highly Accurate : Detect voltage ± 2%
*Built-In Delay time : 1ms ~ 50ms,
50ms ~ 200ms,
200ms ~ 400ms,
*Detect Voltage Temperature Characteristics:
TYP± 100ppm/℃
*Wide Operating Voltage Range : 0.7V ~ 10.0V
*Low Current Consumption : TYP 1.0 µA (V
IN
=2.0V)
SOT-23
*Pb-free plating product number: 81CXXXL/81NXXXL
ORDERING INFORMATION
CMOS:
Order Number
Normal
Lead Free Plating
81Cxx①-AB3-E-R
81Cxx①L-AB3-E-R
81Cxx①-AE3-3-R
81Cxx①L-AE3-3-R
81Cxx①-AE3-5-R
81Cxx①L-AE3-5-R
81Cxx①-T92-D-B
81Cxx①L-T92-D-B
81Cxx①-T92-E-B
81Cxx①L-T92-E-B
81Cxx①-T92-D-K
81Cxx①L-T92-D-K
81Cxx①-T92-E-K
81Cxx①L-T92-E-K
N-Channel:
Order Number
①:Delay
Time
Normal
Lead Free Plating
Duration
Code
81Nxx①-AB3-E-R
81Nxx①L-AB3-E-R
81Nxx①-AE3-3-R
81Nxx①L-AE3-3-R
81Nxx①-AE3-5-R
81Nxx①L-AE3-5-R
H
1 ~ 50 ms
J
81Nxx①-T92-D-B
81Nxx①L-T92-D-B
50 ~ 200 ms
81Nxx①-T92-E-B
81Nxx①L-T92-E-B 200 ~ 400 ms K
81Nxx①-T92-D-K
81Nxx①L-T92-D-K
81Nxx①-T92-E-K
81Nxx①L-T92-E-K
Note: 1. Pin assignment: I:Vin O:Vout G:Vss
2.xx: Output Voltage, refer to Marking Information.
Package
SOT-89
SOT-23
SOT-23
TO-92
TO-92
TO-92
TO-92
Pin Assign.
1
2
3
O
I
G
O G
I
G O
I
I
G O
O
I
G
I
G O
O
I
G
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Box
Tape Box
Bulk
Bulk
①:Delay
Time
Duration
Code
Package
SOT-89
SOT-23
SOT-23
TO-92
TO-92
TO-92
TO-92
Pin Assign.
1
2
3
O
I
G
O G
I
G O
I
I
G O
O
I
G
I
G O
O
I
G
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Box
Tape Box
Bulk
Bulk
1 ~ 50 ms
50 ~ 200 ms
200 ~ 400 ms
P
Q
R
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QW-R502-039,G
81CXXX/81NXXX
ORDERING INFORMATION(Cont.)
CMOS IC
8 1 C xx
1
L
- A B 3 - E - R
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Lead Plating
(5)Delay Time
(6)Output Voltage Code
(7)Output Configuration
(1) R: Tape Reel, B: Tape Box, K: Bulk
(2) refer to Pin Assignment
(3) AB3: SOT-89, AE3: SOT-23, T92: TO-92
(4) L: Lead Free Plating, Blank: Pb/Sn
(5)
1
: refer to Delay Time
(6) xx: refer to Marking Information
(7) C: CMOS, N: N-Cannel
MARKING INFORMATION
PACKAGE
VOLTAGE CODE
MARKING
SOT-89
TO-92
18:1.8V
19:1.9V
20:2.0V
21:2.1V
22:2.2V
23:2.3V
24:2.4V
25:2.5V
26:2.6V
27:2.7V
28:2.8V
29:2.9V
30:3.0V
31:3.1V
32:3.2V
33:3.3V
34:3.4V
35:3.5V
36:3.6V
37:3.7V
38:3.8V
39:3.9V
40:4.0V
41:4.1V
42:4.2V
43:4.3V
44:4.4V
45:4.5V
46:4.6V
47:4.7V
48:4.8V
49:4.9V
50:5.0V
Date Code
C:CMOS
N:N-Channel
81XXXX
1
2
3
Space:Pb/Sn
L:Pb-free
Voltage Code
C:CMOS
N:N-Channel
UTC
81XXXX
Space:Pb/Sn
L:Pb-free
Voltage Code
Date Code
Pin Code
1
2
3
PACKAGE INTEGER* CODE DECIMAL** CODE
1.
1
.0
A
2.
2
.1
B
3.
3
.2
C
4.
4
.3
D
5.
5
.4
E
SOT-23
Voltage Code
6.
6
.5
F
.6
G
.7
H
.8
J
.9
K
* Represents the integer of the Detect Voltage
** Represents the decimal number of the Detect Voltage
MARKING
3
Month
Space:Pb/Sn, L:Pb-free
Pin Code
2
1
EXAMPLE:
81C27P
3
2HA L
2
1
Month (January )
L:Pb-free
Pin Code
Voltage Code
81N27H
3
2HE
2
L
1
Month (May)
L:Pb-free
Pin Code
Voltage Code
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QW-R502-039,G
81CXXX/81NXXX
BLOCK DIAGRAM
V
IN
CMOS IC
Delay
Circuit
V
REF
V
OUT
Vss
CMOS Output
V
IN
V
OUT
Delay Circuit
V
REF
Vss
N-channel Open Drain Output
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QW-R502-039,G
81CXXX/81NXXX
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
SYMBOL
V
IN
I
OUT
CMOS IC
RATINGS
UNIT
Input Voltage
12
V
Output Current
50
mA
CMOS
V
SS
-0.3 ~ V
IN
+0.3
Output Voltage
V
OUT
V
N-Ch open drain
V
SS
-0.3 ~ 9
SOT-23
150
Power Dissipation
P
D
mW
SOT-89
500
TO-92
300
℃
Operating Temperature
T
OPR
-30 ~ +80
℃
Storage Temperature
T
STG
-40 ~ +125
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Case
SOT-23
SOT-89
TO-92
SYMBOL
θ
JC
RATINGS
200
100
45
MIN
V
DF
(T)
X0.98
V
DF
X0.02
0.7
TYP
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
PARAMETER
Detect Voltage
Hysteresis Range
Operating Voltage
SYMBOL CIRCUIT
V
DF
V
HYS
V
IN
1
1
1
V
DF
=1.6V ~ 6.0V
V
IN
=1.5V
=2.0V
=3.0V
=4.0V
=5.0V
N-ch V
DS
=0.5V, V
IN
=1.0V
=2.0V
=3.0V
=4.0V
=5.0V
P-ch V
DS
=2.1V
V
IN
=8.0V
(CMOS output)
TEST CONDITIONS
MAX UNIT
V
DF
(T)
V
DF
(T)
V
X1.02
V
DF
V
DF
V
X0.05 X0.08
10.0
V
2.6
0.9
3.0
1.0
µA
3.4
1.3
3.8
1.5
4.2
2.0
2.2
7.9
10.1
11.5
mA
13.0
-15.4
±100
200
ppm/℃
ms
Supply Current
I
SS
2
3
Output Current
I
OUT
4
V
DF
∆V
DF
Temperature Characteristics
∆Topr×V
DF
V
IN
changes from
Transient Delay Time
50
5
t
DLY
*
(V
DR
V
OUT
inversion)
0.6V ~ 10V
V
DF
(T): established detect voltage value
Release Voltage: V
DR
= V
DF
+ V
HYS
* Transient Delay Time : 1ms ~ 50ms & 200ms ~ 400ms versions are also available.
Note: The power consumption during power-start to output being stable (release operation) is 2 µA greater than it is
after that period (completion of release operation) because of delay circuit through current.
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QW-R502-039,G
81CXXX/81NXXX
TEST CIRCUITS
1-1
1-2
100kΩ
CMOS IC
V
IN
V
IN
+
-
V
V
OUT
V
SS
V
IN
V
+
-
V
V
IN
V
OUT
V
SS
V
Cmos Output
N-channel Open Drain Output
2
A
V
IN
+
-
V
IN
V
OUT
V
SS
3
V
IN
V
IN
+
-
V
OUT
Vss
A
+
-
V
DS
4
+ V
DS
V
IN
V
IN
+
-
V
OUT
Vss
A
-
5-1
V
IN
V
IN
V
OUT
Vss
Measurement
waveform
Cmos Output
5-2
100kΩ
V
IN
V
IN
V
OUT
Vss
Measurement
waveform
N-channel Open Drain Output
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QW-R502-039,G
Microchip MCU
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