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RB551V_30

Description
0.5 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size71KB,1 Pages
ManufacturerETC
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RB551V_30 Overview

0.5 A, SILICON, SIGNAL DIODE

RB551V-30
Schottky Diodes
FEATURES
High current rectifier Schottky diode
Low voltage, low inductance
For power supply
MAKING: D
Maximum Ratings and Electrical Characteristics, Single Diode @T
A
=25℃
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
O
I
FSM
T
j
T
stg
Limits
30
20
0.5
2
125
-40~+125
Unit
V
V
A
A
Electrical Ratings @T
A
=25℃
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Min.
Typ.
Max.
0.36
0.47
100
Unit
V
µA
Conditions
I
F
=100mA
I
F
=500mA
V
R
=20V

RB551V_30 Related Products

RB551V_30 RB551V-30
Description 0.5 A, SILICON, SIGNAL DIODE 0.5 A, SILICON, SIGNAL DIODE

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