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RB551V-30

Description
0.5 A, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size55KB,6 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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RB551V-30 Overview

0.5 A, SILICON, SIGNAL DIODE

RB551V-30 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeSC-90A
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.36 V
JESD-30 codeR-PDSO-F2
JESD-609 codee1
Maximum non-repetitive peak forward current2 A
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current0.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
SBD
T y p e :
FSH04A04
FSH04A04
OULINE DRAWING
FEATURES
*Similar to TO-220AC Case
*Fully Molded Isolation
*Low Forward Voltage Drop
*Low Power Loss,High Efficiency
*High Surge Capability
*Tj=150
°C
operation
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Repetitive Peak Surge Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Mounting torque
Approx Net Weight:
1.7g
Symbol
V
RRM
V
RRSM
I
O
I
F(RMS)
I
FSM
T
jw
T
stg
Ftor
FSH04A04
40
45(pulse width
1µs duty
1/50)
50 Hz half Sine Wave
4
Tc=131°C
Resistive Load
6.28
50Hz Half Sine Wave ,1cycle
100
Non-repetitive
-40 to +150
-40 to +150
recommended torque = 0.5
Unit
V
V
A
A
A
°C
°C
N
m
Electrical
Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
I
RM
V
FM
Conditions
Min.
-
-
-
-
Typ. Max.
-
-
-
-
1
0.61
6
1.5
Unit
mA
V
°C
/W
°C
/W
Tj= 25°C, V
RM
= V
RRM
Tj= 25°C, I
FM
= 4 A
Rth(j-c) Junction to Case
Rth(c-f) Cace to Fin

RB551V-30 Related Products

RB551V-30
Description 0.5 A, SILICON, SIGNAL DIODE
Is it lead-free? Lead free
Is it Rohs certified? conform to
Maker ROHM Semiconductor
Parts packaging code SC-90A
package instruction R-PDSO-F2
Contacts 2
Reach Compliance Code compli
ECCN code EAR99
Other features HIGH RELIABILITY
Configuration SINGLE
Diode component materials SILICON
Diode type RECTIFIER DIODE
Maximum forward voltage (VF) 0.36 V
JESD-30 code R-PDSO-F2
JESD-609 code e1
Maximum non-repetitive peak forward current 2 A
Number of components 1
Number of terminals 2
Maximum operating temperature 125 °C
Maximum output current 0.5 A
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260
Certification status Not Qualified
Maximum repetitive peak reverse voltage 30 V
surface mount YES
technology SCHOTTKY
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form FLAT
Terminal location DUAL
Maximum time at peak reflow temperature 10

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