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RA252

Description
SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size75KB,2 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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RA252 Overview

SILICON, RECTIFIER DIODE

MCC
Features
l
  omponents
21201 Itasca Street Chatsworth

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RA251
THRU
RA257
25.0 Amp High
Current Plastic Silicon
Rectifier
50 to 1000 Volts
Plastic Material Used Carriers Underwrites Laboratory
Classification 94V-O
Low Cost Construction Utilizing Void-free Molded Plastic
Technique
High Surge Capability
Diffused Junction
l
l
l
Maximum Ratings
l
l
Operating & Storage Temperature: -50 C to +175 C
For Capacitive Load, Derate Current by 20%
Maximum
Recurrent
Peak
Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
o
o
RA
A
MCC Part
Number
RA251
RA252
RA253
RA254
RA255
RA256
RA257
Maximum
RMS Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
D
E
C
Electrical Characteristics @ 25
o
C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Reverse
Recovery Times
Typical Junction
Capacitance
I
F(AV)
I
FSM
V
F
25.0A
400A
T
C
=150
o
C
8.3ms half
sine
I
FM
=25.0A
T
A
=25 C
o
B
1.1V
I
R
5.0uA
T
C
=25
o
C
I
F
=0.5A,
I
R
=1.0A,
I
rr
=0.25A
Measured at
1.0MHz,
V
R
=4.0V
t
rr
3.0us
DIMENSION
DIM INCHES
MM
NOTE
MIN MAX MIN MAX
A .380 .410 9.70 10.40
B .165 .185 4.19 4.70
C .215 .225 5.50 5.70
D .235 .250 6.00 6.40
E -----
5
o
-----
5
o
NOM
C
j
300pF
www.mccsemi.com

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