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IM6561AMJN/B

Description
Standard SRAM, 256X4, 180ns, CMOS, CDIP18
Categorystorage    storage   
File Size383KB,6 Pages
ManufacturerGeneral Electric Solid State
Download Datasheet Parametric View All

IM6561AMJN/B Overview

Standard SRAM, 256X4, 180ns, CMOS, CDIP18

IM6561AMJN/B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid101268019
package instructionDIP, DIP18,.3
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time180 ns
JESD-30 codeR-XDIP-T18
JESD-609 codee0
memory density1024 bit
Memory IC TypeSTANDARD SRAM
memory width4
Number of terminals18
word count256 words
character code256
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize256X4
Output characteristics3-STATE
Package body materialCERAMIC
encapsulated codeDIP
Encapsulate equivalent codeDIP18,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum standby current0.00001 A
Minimum standby current4.5 V
Maximum slew rate0.002 mA
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
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