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IM6561MDN/B

Description
Standard SRAM, 256X4, 360ns, CMOS, PDIP18
Categorystorage    storage   
File Size383KB,6 Pages
ManufacturerGeneral Electric Solid State
Download Datasheet Parametric View All

IM6561MDN/B Overview

Standard SRAM, 256X4, 360ns, CMOS, PDIP18

IM6561MDN/B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid101268021
package instructionDIP, DIP18,.3
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time360 ns
JESD-30 codeR-PDIP-T18
JESD-609 codee0
memory density1024 bit
Memory IC TypeSTANDARD SRAM
memory width4
Number of terminals18
word count256 words
character code256
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize256X4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP18,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum standby current0.00001 A
Minimum standby current4.5 V
Maximum slew rate0.002 mA
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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