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IM65X61AMJN

Description
Standard SRAM, 256X4, 235ns, CMOS, CDIP18
Categorystorage    storage   
File Size383KB,6 Pages
ManufacturerGeneral Electric Solid State
Download Datasheet Parametric View All

IM65X61AMJN Overview

Standard SRAM, 256X4, 235ns, CMOS, CDIP18

IM65X61AMJN Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid101268051
package instructionDIP, DIP18,.3
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time235 ns
JESD-30 codeR-XDIP-T18
JESD-609 codee0
memory density1024 bit
Memory IC TypeSTANDARD SRAM
memory width4
Number of terminals18
word count256 words
character code256
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize256X4
Output characteristics3-STATE
Package body materialCERAMIC
encapsulated codeDIP
Encapsulate equivalent codeDIP18,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum standby current0.00005 A
Minimum standby current4.5 V
Maximum slew rate0.01 mA
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL

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