JANTXV2N6661 datasheet, PDF - EEWORLD Datasheet

JANTXV2N6661: DescriptionSmall Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size338KB，17 Pages; ManufacturerAtmel (Microchip)

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JANTXV2N6661 Overview

Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN

Parameter Name	Attribute value
Objectid	1482084012
package instruction	TO-39, 3 PIN
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW THRESHOLD
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	90 V
Maximum drain current (ID)	0.86 A
Maximum drain-source on-resistance	4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	10 pF
JEDEC-95 code	TO-205AD
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
Guideline	MIL
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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