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irf540

Description
28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size178KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

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IRF540 Overview

28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRF540 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)28 A
Maximum drain current (ID)28 A
Maximum drain-source on-resistance0.077 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Maximum power consumption environment150 W
Maximum power dissipation(Abs)150 W
Maximum pulsed drain current (IDM)110 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
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