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IRF6665

Description
DIGITAL AUDIO MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size232KB,10 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRF6665 Overview

DIGITAL AUDIO MOSFET

IRF6665 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionISOMETRIC-3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)11 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)19 A
Maximum drain current (ID)4.2 A
Maximum drain-source on-resistance0.062 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XBCC-N3
JESD-609 codee4
Humidity sensitivity level3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)42 W
Maximum pulsed drain current (IDM)34 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceSilver/Nickel (Ag/Ni)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
PD - 97230A
DIGITAL AUDIO MOSFET
IRF6665PbF
IRF6665TRPbF
V
DS
Key Parameters
100
53
8.7
1.9
V
m:
nC
R
DS(on)
typ. @ V
GS
= 10V
Q
g
typ.
R
G(int)
typ.
Features
Latest MOSFET Silicon technology
Key parameters optimized for Class-D audio amplifier
applications
Low R
DS(on)
for improved efficiency
Low Q
g
for better THD and improved efficiency
Low Q
rr
for better THD and lower EMI
Low package stray inductance for reduced ringing and lower
EMI
Can deliver up to 100W per channel into 8Ω with no heatsink
Š
Dual sided cooling compatible
·
Compatible with existing surface mount technologies
·
RoHS compliant containing no lead or bromide
·Lead-Free
(Qualified up to 260°C Reflow)
SH
MT
MN
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SQ
SX
ST
SH
MQ
MX
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF6665PbF device utilizes DirectFET
TM
packaging technology. DirectFET
TM
packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET
TM
package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The
DirectFET
TM
package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-
tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for
Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
e
Power Dissipation
e
Maximum Power Dissipation
Max.
100
± 20
19
4.2
3.4
34
42
2.2
1.4
0.017
-40 to + 150
Units
V
A
c
W
Linear Derating Factor
Operating Junction and
Storage Temperature Range
W/°C
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
ek
Junction-to-Ambient
hk
Junction-to-Ambient
ik
Junction-to-Case
jk
Junction-to-Ambient
Parameter
Typ.
–––
12.5
20
–––
1.4
Max.
58
–––
–––
3.0
–––
Units
°C/W
Junction-to-PCB Mounted
Notes

through
Š
are on page 2
www.irf.com
1
08/25/06

IRF6665 Related Products

IRF6665
Description DIGITAL AUDIO MOSFET
Is it Rohs certified? conform to
Maker International Rectifier ( Infineon )
package instruction ISOMETRIC-3
Contacts 3
Reach Compliance Code unknow
ECCN code EAR99
Other features HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas) 11 mJ
Shell connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V
Maximum drain current (Abs) (ID) 19 A
Maximum drain current (ID) 4.2 A
Maximum drain-source on-resistance 0.062 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-XBCC-N3
JESD-609 code e4
Humidity sensitivity level 3
Number of components 1
Number of terminals 3
Operating mode ENHANCEMENT MODE
Maximum operating temperature 150 °C
Package body material UNSPECIFIED
Package shape RECTANGULAR
Package form CHIP CARRIER
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type N-CHANNEL
Maximum power dissipation(Abs) 42 W
Maximum pulsed drain current (IDM) 34 A
Certification status Not Qualified
surface mount YES
Terminal surface Silver/Nickel (Ag/Ni)
Terminal form NO LEAD
Terminal location BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications AMPLIFIER
Transistor component materials SILICON
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