AP9579GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Low On-resistance
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
▼
Halogen Free & RoHS Compliant
G
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
-60V
25mΩ
-45A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and using infrared reflow technique and
suited for high current application due to the low connection resistance.
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Total Power Dissipation
3
Storage Temperature Range
Operating Junction Temperature Range
Rating
-60
+20
-45
-28.7
-160
89.3
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
o
o
C
C
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
1.4
62.5
Units
o
o
C/W
C/W
1
Data and specifications subject to change without notice
201203051
AP9579GH-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-20A
V
GS
=-4.5V, I
D
=-15A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-20A
V
DS
=-48V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=-20A
V
DS
=-48V
V
GS
=-4.5V
V
DS
=-30V
I
D
=-20A
R
G
=3.3Ω
V
GS
=-10V
V
GS
=0V
V
DS
=-25V
f=1.0MHz
Min.
-60
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
36
-
-
45
7.5
26
12
38
70
94
375
270
Max. Units
-
25
30
-3
-
-25
+100
72
-
-
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
3600 5760
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=-20A, V
GS
=0V
I
S
=-20A, V
GS
=0V,
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
43
63
Max. Units
-1.3
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9579GH-HF
160
100
T
C
= 25 C
o
-I
D
, Drain Current (A)
120
-I
D
, Drain Current (A)
-10V
-7.0V
-6.0V
-5.0V
T
C
=150 C
80
o
-10V
-7.0V
-6.0V
-5.0V
V
G
= -4.0V
V
G
= -4.0V
80
60
40
40
20
0
0
4
8
12
16
0
0
2
4
6
8
10
12
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
25
2.0
I
D
= -15 A
T
C
=25
o
C
Normalized R
DS(ON)
2
4
6
8
10
23
I
D
= - 20 A
V
G
= -10V
1.6
R
DS(ON)
(m
Ω
)
21
1.2
19
0.8
17
0.4
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
20
16
1.2
12
T
j
=150
o
C
8
T
j
=25
o
C
Normalized -V
GS(th)
1.2
1.4
-I
S
(A)
0.8
0.4
4
0
0
0.2
0.4
0.6
0.8
1
0.0
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9579GH-HF
f=1.0MHz
10
5000
-V
GS
, Gate to Source Voltage (V)
V
DS
= - 48 V
I
D
= - 20 A
8
4000
C
iss
6
C (pF)
3000
4
2000
2
1000
0
0
20
40
60
80
0
1
5
9
13
17
21
25
C
oss
C
rss
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
10us
100
Operation in this area
limited by R
DS(ON)
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
-I
D
(A)
100us
0.1
0.1
0.05
1ms
10
P
DM
t
0.02
0.01
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
T
c
=25
o
C
Single Pulse
1
0.1
1
10
10ms
100ms
DC
100
1000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
-4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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