EEWORLDEEWORLDEEWORLD

Part Number

Search

IRF7425

Description
HEXFET Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size203KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRF7425 Overview

HEXFET Power MOSFET

IRF7425 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeSOIC
package instructionSOP-8
Contacts8
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresULTRA LOW RESISTANCE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)15 A
Maximum drain current (ID)15 A
Maximum drain-source on-resistance0.0082 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMS-012AA
JESD-30 codeR-PDSO-G8
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)1.6 W
Maximum pulsed drain current (IDM)60 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
IRF7425PbF
V
DS
R
DS(on) max
(@V
GS
= -4.5V)
-20
8.2
V
S
1
2
3
4
HEXFET
®
Power MOSFET
8
7
A
D
D
D
D
R
DS(on) max
(@V
GS
= -2.5V)
13
87
-15
nC
A
S
S
G
6
5
Q
g (typical)
I
D
(@T
A
= 25°C)
Top View
SO-8
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1,Consumer qualification
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7425PbF
Package Type
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7425PbF
IRF7425TRPbF
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current

Power Dissipation
ƒ
Power Dissipation
ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-15
-12
-60
2.5
1.6
20
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
ƒ
Max.
50
Units
°C/W
1
www.irf.com
©
2013 International Rectifier
Submit Datasheet Feedback
October 29, 2013

IRF7425 Related Products

IRF7425
Description HEXFET Power MOSFET
Is it Rohs certified? incompatible
Maker International Rectifier ( Infineon )
Parts packaging code SOIC
package instruction SOP-8
Contacts 8
Reach Compliance Code unknow
ECCN code EAR99
Other features ULTRA LOW RESISTANCE
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V
Maximum drain current (Abs) (ID) 15 A
Maximum drain current (ID) 15 A
Maximum drain-source on-resistance 0.0082 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code MS-012AA
JESD-30 code R-PDSO-G8
JESD-609 code e0
Humidity sensitivity level 1
Number of components 1
Number of terminals 8
Operating mode ENHANCEMENT MODE
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) 245
Polarity/channel type P-CHANNEL
Maximum power dissipation(Abs) 1.6 W
Maximum pulsed drain current (IDM) 60 A
Certification status Not Qualified
surface mount YES
Terminal surface Tin/Lead (Sn/Pb)
Terminal form GULL WING
Terminal location DUAL
Maximum time at peak reflow temperature 30
transistor applications SWITCHING
Transistor component materials SILICON
Professor Hu Zhengming, inventor of FinFET technology
[color=#333333]Professor Hu Zhengming, inventor of FinFET technology[/color] [color=#909090]After 2010, the Bulk CMOS process technology that lasted for decades came to an end at 20nm. The FinFET and ...
qwqwqw2088 Analogue and Mixed Signal
STM32_Using V3.4 library in KEIL_MDK environment.pdf
Beginners watch....
范小川 stm32/stm8
Ask about driver development
I want to work on embedded driver development, but I wonder if there is a future for it?...
mosquit Embedded System
National Semiconductor Communications Circuits Handbook
National Semiconductor Communications Circuits Manual (cover and contents)[hide][/hide]...
chen8710 TI Technology Forum
Using Tornado, error when launching VxSim
When starting VxSim, the message Connecting to target agent... Error: rpccore backend client Timed out failed appears. How can I solve this problem? ?...
chenlei123321 Embedded System
Help STM32 serial port receive data
int main(void) { uint8_t i; uint8_t buzzer[20]={0xAA,0xA0,0xFF,0xF8,0x8F,0x88,0xFF}; SysTick_Config(SystemCoreClock/1000); USART_Config(); while(1){ if(RXOVER == 1){ USART_SendString3(buzzer); USART_S...
小子不乖1229 Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1393  2416  555  2619  2859  29  49  12  53  58 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号