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TLP598G

Description
Photo−MOS FET in a Six Lead Plastic DIP Package
CategoryLED optoelectronic/LED    photoelectric   
File Size175KB,7 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

TLP598G Overview

Photo−MOS FET in a Six Lead Plastic DIP Package

TLP598G Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instructionPLASTIC, 11-9A1, DIP-6
Reach Compliance Codeunknow
Other featuresUL RECOGNIZED, BI-DIRECTIONAL
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum forward current0.02 A
Maximum insulation voltage2500 V
JESD-609 codee0
Number of components1
Maximum on-state current0.15 A
Maximum on-state resistance12 Ω
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Optoelectronic device typesTRANSISTOR OUTPUT SSR
Terminal surfaceTin/Lead (Sn/Pb)
TLP598G
TOSHIBA Photocoupler Photo Relay
TLP598G
Telecommunication
Data Acquisition
Measurement Instrumentation
Unit in mm
The TOSHIBA TLP598G consists of an aluminum gallium arsenide
infrared emitting diode optically coupled to a photo−MOS FET in a six
lead plastic DIP package (DIP6).
The TLP598G is a bi-directional switch which can replace mechanical
relays in many applications.
·
·
·
·
·
·
Peak off−state voltage: 400 V (min.)
On−state current:
150
mA (max.) (A connection)
On−state resistance:
12 Ω
(max.) (A connection)
Isolation voltage: 2500 Vrms (min.) (A connection)
UL recognized: UL1577, file no. E67349
Trigger LED current (Ta = 25°C)
Classification
(Note 1)
(IFT2)
Standard
Trigger LED Current
(mA)
@I
ON
= 150 mA
Min.
Max.
2
5
T2
T2, blank
Marking Of
Classification
TOSHIBA
Weight: 0.49 g
11−9A1
Pin Configuration
(top view)
1
2
3
6
5
4
1. : ANODE
2. : CATHODE
3. : NC
4. : DRAIN D1
5. : SOURCE
6. : DRAIN D2
(Note 1): Application type name for certification test,
please use standard product type name, i.e.
TLP598G (IFT2): TLP598G
Schematic
1
2
6
5
4
1
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