PD-94576A
IRGIB10B60KD1
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175°C
G
E
C
V
CES
= 600V
I
C
= 10A, T
C
=100°C
t
sc
> 10µs, T
J
=150°C
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
n-channel
V
CE(on)
typ. = 1.7V
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
ISOL
V
GE
P
D
@ T
C
= 25°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
TO-220
Full-Pak
Max.
600
16
10
A
32
32
16
10
32
2500
±20
44
22
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
10 lbf.in (1.1N.m)
W
V
Units
V
c
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to Case, t = 1 min
Gate-to-Emitter Voltage
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
P
D
@ T
C
= 100°C Maximum Power Dissipation
Thermal / Mechanical Characteristics
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2.0
Max.
3.4
5.3
–––
62
–––
Units
°C/W
g
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1
2/27/04
IRGIB10B60KD1
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
—
0.99
1.70
2.05
2.06
4.5
-10
5.0
1.0
90
150
1.80
1.32
1.23
—
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
—
1.50
V
CE(on)
Collector-to-Emitter Voltage
—
—
V
GE(th)
Gate Threshold Voltage
3.5
∆V
GE(th)
/∆T
J
Threshold Voltage temp. coefficient
—
gfe
Forward Transconductance
—
—
I
CES
Zero Gate Voltage Collector Current
—
—
V
FM
Diode Forward Voltage Drop
—
—
—
I
GES
Gate-to-Emitter Leakage Current
—
—
V V
GE
= 0V, I
C
= 500µA
—
V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
I
C
= 10A, V
GE
= 15V, T
J
= 25°C
2.10
2.35
V I
C
= 10A, V
GE
= 15V, T
J
= 150°C
I
C
= 10A, V
GE
= 15V, T
J
= 175°C
2.35
5.5
V V
CE
= V
GE
, I
C
= 250µA
— mV/°C V
CE
= V
GE
, I
C
= 1mA (25°C-150°C)
—
S V
CE
= 50V, I
C
= 10A, PW = 80µs
V
GE
= 0V, V
CE
= 600V
150
250
µA V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
400
2.40
V I
F
= 5.0A, V
GE
= 0V
I
F
= 5.0A, V
GE
= 0V, T
J
= 150°C
1.74
I
F
= 5.0A, V
GE
= 0V, T
J
= 175°C
1.62
±100 nA V
GE
= ±20V, V
CE
= 0V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
L
E
C
ies
C
oes
C
res
RBSOA
SCSOA
I
SC (PEAK)
E
rec
t
rr
I
rr
Q
rr
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Peak Short Circuit Collector Current
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Min. Typ. Max. Units
—
41
62
—
4.6
6.9
—
19
29
—
156
264
—
165
273
—
321
434
—
25
33
—
24
34
—
180
250
—
62
87
—
261
372
—
313
425
—
574
694
—
22
31
—
24
34
—
240
340
—
48
67
—
7.5
—
—
610
915
—
66
99
—
23
35
FULL SQUARE
10
—
—
—
—
—
—
100
99
79
14
553
—
—
128
103
18
719
nC
Conditions
I
C
= 10A
V
CC
= 400V
V
GE
= 15V
I
C
= 10A, V
CC
= 400V
V
GE
= 15V, R
G
= 50Ω, L = 1.07mH
Ls= 150nH, T
J
= 25°C
I
C
= 10A, V
CC
= 400V
V
GE
= 15V, R
G
= 50Ω, L = 1.1mH
Ls= 150nH, T
J
= 25°C
µJ
d
ns
µJ
ns
I
C
= 10A, V
CC
= 400V
V
GE
= 15V, R
G
= 50Ω, L = 1.07mH
Ls= 150nH, T
J
= 150°C
I
C
= 8.0A, V
CC
= 400V
V
GE
= 15V, R
G
= 50Ω, L = 1.07mH
Ls= 150nH, T
J
= 150°C
d
nH
pF
Measured 5 mm from package
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 150°C, I
C
= 32A, Vp = 600V
V
CC
=500V,V
GE
= +15V to 0V,R
G
= 50Ω
T
J
= 150°C, Vp = 600V, R
G
= 50Ω
V
CC
=360V,V
GE
= +15V to 0V
T
J
= 150°C
V
CC
= 400V, I
F
= 10A, L = 1.07mH
V
GE
= 15V, R
G
= 50Ω
di/dt = 500A/µs
µs
A
µJ
ns
A
nC
Vcc =80% (V
CES
), V
GE
= 20V, L =100µH, R
G
= 50Ω.
Energy losses include "tail" and diode reverse recovery.
2
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IRGIB10B60KD1
20
50
45
16
40
35
Ptot (W)
12
IC (A)
30
25
20
15
8
4
10
5
0
0
20
40
60
80 100 120 140 160 180
T C (°C)
0
0
20
40
60
80 100 120 140 160 180
T C (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
Fig. 2
- Power Dissipation vs. Case
Temperature
100
100
10
10 µs
100 µs
IC (A)
1
1ms
0.1
DC
IC A)
1
10
100
VCE (V)
1000
10000
10
0.01
1
10
100
1000
VCE (V)
Fig. 3
- Forward SOA
T
C
= 25°C; T
J
≤
175°C
Fig. 4
- Reverse Bias SOA
T
J
= 150°C; V
GE
=15V
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3
IRGIB10B60KD1
20
18
16
14
ICE (A)
20
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
18
16
14
12
10
8
6
4
2
0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
12
10
8
6
4
2
0
0
2
VCE (V)
4
6
0
2
VCE (V)
4
6
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
20
18
16
14
ICE (A)
40
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
35
30
25
IF (A)
-40°C
25°C
150°C
12
10
8
6
20
15
10
4
2
0
0
2
VCE (V)
4
6
5
0
0.0
0.5
1.0
1.5
VF (V)
2.0
2.5
3.0
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 150°C; tp = 80µs
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80µs
4
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IRGIB10B60KD1
20
18
16
14
VCE (V)
VCE (V)
20
18
16
14
ICE = 5.0A
ICE = 10A
ICE = 20A
12
10
8
6
4
2
0
5
10
VGE (V)
15
20
5
10
VGE (V)
15
20
ICE = 5.0A
ICE = 10A
ICE = 20A
12
10
8
6
4
2
0
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
20
18
16
14
VCE (V)
100
90
80
70
ICE = 10A
ICE = 20A
ICE (A)
T J = 25°C
T J = 150°C
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 5.0A
60
50
40
30
20
10
0
T J = 150°C
T J = 25°C
0
5
10
VGE (V)
15
20
15
20
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 150°C
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
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