PD - 90697B
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
®
TRANSISTOR
200Volt, 0.11Ω, MEGA RAD HARD HEXFET
Ω
International Rectifier’s RAD HARD technology
HEXFETs demonstrate excellent threshold voltage
stability and breakdown voltage stability at total
radiaition doses as high as 1x10
6
Rads(Si). Under
identical
pre- and post-irradiation test conditions, In-
ternational Rectifier’s RAD HARD HEXFETs retain
identical
electrical specifications up to 1 x 10
5
Rads
(Si) total dose. No compensation in gate drive circuitry
is required. These devices are also capable of surviv-
ing transient ionization pulses as high as 1 x 10
12
Rads
(Si)/Sec, and return to normal operation within a few
microseconds. Since the RAD HARD process utilizes
International Rectifier’s patented HEXFET technology,
the user can expect the highest quality and reliability
in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy
pulse circuits in space and weapons environments.
IRH7250
IRH8250
N CHANNEL
MEGA HARD RAD
Product Summary
Part Number
IRH7250
IRH8250
BV
DSS
200V
200V
R
DS(on)
0.11Ω
0.11Ω
I
D
26A
26A
Features:
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 10
6
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
26
16
104
150
1.2
±20
500
26
15
5.0
-55 to 150
Pre-Irradiation
IRH7250, IRH8250
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (typical)
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1
10/14/98
IRH7250, IRH8250 Devices
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
200
—
—
—
2.0
8.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.27
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
13
—
—
0.10
0.11
4.0
—
25
250
100
-100
170
30
60
33
140
140
140
—
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 16A
VGS = 12V, ID = 26A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 16A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 26A
VDS = Max Rating x 0.5
VDD = 100V, ID = 26A,
RG = 2.35Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LD
LS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
nA
nC
ns
nH
Measured from drain
Modified MOSFET sym-
lead, 6mm (0.25 in)
bol showing the internal
from package to center inductances.
of die.
Measured from source
lead, 6mm (0.25 in)
from package to
source bonding pad.
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4700
850
210
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
26
104
1.4
820
12
Test Conditions
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
T
j
= 25°C, IS = 26A, VGS = 0V
Tj = 25°C, IF = 26A, di/dt
≤
100A/µs
VDD
≤
50V
A
V
ns
µC
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
Min Typ Max Units
—
—
0.12
—
—
—
0.83
30
—
°C/W
Test Conditions
Typical socket mount
2
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IRH7250, IRH8250 Devices
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
comprises three radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MIL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of 12 volts per
note 5 and a V
DS
bias condition equal to 80% of the
device rated voltage per note 6. Pre- and post- irra-
diation limits of the devices irradiated to 1 x 10
5
Rads
(Si) are identical and are presented in Table 1, col-
umn 1, IRH7250. Post-irradiation limits of the devices
irradiated to 1 x 10
6
Rads (Si) are presented in Table
Radiation Characteristics
1, column 2, IRH8250. The values in Table 1 will be
met for either of the two low dose rate test circuits that
are used. Both pre- and post-irradiation performance
are tested and specified using the same drive circuitry
and test conditions in order to provide a direct com-
parison.
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 10
12
Rads
(Si)/Sec (See Table 2).
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects char-
acterization is shown in Table 3.
Table 1. Low Dose Rate
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
V
SD
IRH7250
Min
Max
IRH8250
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= 12V, I
D
= 16A
TC = 25°C, IS =26A,V
GS
= 0V
Min
200
1.25
—
—
—
—
—
Max
—
4.5
100
-100
50
0.155
1.4
V
nA
µA
Ω
V
100K Rads (Si) 1000K Rads (Si)
Units
Drain-to-Source Breakdown Voltage 200
—
Gate Threshold Voltage
2.0
4.0
Gate-to-Source Leakage Forward
—
100
Gate-to-Source Leakage Reverse
—
-100
Zero Gate Voltage Drain Current
—
25
Static Drain-to-Source
— 0.100
On-State Resistance One
Diode Forward Voltage
—
1.4
Table 2. High Dose Rate
Parameter
V
DSS
IPP
di/dt
L1
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Drain-to-Source Voltage
Min Typ Max Min Typ Max
Units
Test Conditions
—
— 160 —
— 160
V
Applied drain-to-source voltage during
gamma-dot
— 15 —
— 15
—
A
Peak radiation induced photo-current
—
— 160 —
—
8.0 A/µsec Rate of rise of photo-current
1.0 —
— 20 —
—
µH
Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Ion
Cu
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ions/cm
2
)
3x 10
5
Range
(µm)
43
V
DS
Bias
(V)
180
V
GS
Bias
(V)
-5
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3
IRH7250, IRH8250 Devices
Post-Irradiation
Fig 1.
Typical Response of Gate Threshhold
Voltage Vs. Total Dose Exposure
Fig 2.
Typical Response of On-State Resistance
Vs. Total Dose Exposure
Fig 3.
Typical Response of Transconductance
Vs. Total Dose Exposure
Fig 4.
Typical Response of Drain to Source
Breakdown Vs. Total Dose Exposure
4
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IRH7250, IRH8250 Devices
Post-Irradiation
Fig 5.
Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6.
Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a.
Gate Stress of V
GSS
Equals 12 Volts During
Radiation
Fig 7.
Typical Transient Response
of Rad Hard HEXFET During
1x10
12
Rad (Si)/Sec Exposure
Fig 8b.
V
DSS
Stress Equals
80% of B
VDSS
During Radiation
Fig 9.
High Dose Rate
(Gamma Dot) Test Circuit
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