PD 9.1695A
PRELIMINARY
l
l
l
l
IRL3202
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Optimized for 4.5V-7.0V Gate Drive
Ideal for CPU Core DC-DC Converters
Fast Switching
G
V
DSS
= 20V
R
DS(on)
= 0.016W
S
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
I
D
= 48A
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
V
GSM
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
48
30
190
69
0.56
± 10
14
270
29
6.9
5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
qJC
R
qCS
R
qJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
1.8
–––
62
Units
°C/W
11/18/97
IRL3202
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
DV
(BR)DSS
/DT
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
0.70
28
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.029
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.8
100
63
82
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.019
V
GS
= 4.5V, I
D
= 29A
W
0.016
V
GS
= 7.0V, I
D
= 29A
–––
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 16V, I
D
= 29A
25
V
DS
= 20V, V
GS
= 0V
µA
250
V
DS
= 10V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 10V
nA
-100
V
GS
= -10V
43
I
D
= 29A
12
nC
V
DS
= 16V
13
V
GS
= 4.5V, See Fig. 6
–––
V
DD
= 10V
–––
I
D
= 29A
ns
–––
R
G
= 9.5W V
GS
= 4.5V
,
–––
R
D
= 0.3W
,
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
2000 –––
V
GS
= 0V
800 –––
pF
V
DS
= 15V
290 –––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
48
––– –––
showing the
A
G
integral reverse
––– ––– 190
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 29A, V
GS
= 0V
––– 68 100
ns
T
J
= 25°C, I
F
= 29A
––– 130 190
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
I £
29A, di/dt
£
63A/µs, V
DD
£
V
(BR)DSS
,
SD
T
J
£
150°C
Starting T
J
= 25°C, L = 0.64mH
R
G
= 25W , I
AS
= 29A.
Pulse width
£
300µs; duty cycle
£
2%.
IRL3202
1000
VGS
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
BOTTOM
2.00V
BOTTOM 1.75V
1000
100
10
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
BOTTOM
2.00V
BOTTOM 1.75V
TOP
100
10
2.0V
2.0V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
T
J
= 25
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 48A
I
D
, Drain-to-Source Current (A)
1.5
100
T
J
= 150
°
C
1.0
10
0.5
1
2
3
V DS = 15V
20µs PULSE WIDTH
4
5
0.0
-60 -40 -20
V
GS
= 4.5V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRL3202
3500
3000
V
GS
, Gate-to-Source Voltage (V)
V
GS
=
C
iss
=
C
rss
=
C
oss
=
0V,
f = 1MHz
C
gs
+ C
gd ,
C
ds
SHORTED
C
gd
C
ds
+ C
gd
15
I
D
=
29A
V
DS
= 16V
12
C, Capacitance (pF)
2500
C
iss
2000
9
1500
C
oss
1000
6
3
500
C
rss
0
1
10
100
0
0
10
20
30
40
50
60
70
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
I
D
, Drain Current (A)
100
T
J
= 150
°
C
100us
1ms
10
T
J
= 25
°
C
10
10ms
1
0.2
V
GS
= 0 V
0.8
1.4
2.0
2.6
1
1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRL3202
E
AS
, Single Pulse Avalanche Energy (mJ)
50
600
TOP
500
40
BOTTOM
ID
13A
18A
29A
I
D
, Drain Current (A)
400
30
300
20
200
10
100
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
, Case Temperature ( ° C)
Starting T , Junction Temperature(
°
C)
J
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
t
2
0.1
0.02
0.01
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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