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IRLW510A

Description
ADVANCED POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size262KB,9 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

IRLW510A Overview

ADVANCED POWER MOSFET

IRLW510A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)62 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)5.6 A
Maximum drain current (ID)5.6 A
Maximum drain-source on-resistance0.44 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)37 W
Maximum pulsed drain current (IDM)20 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
$GYDQFHG 3RZHU 026)(7
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175°C Operating Temperature
Lower Leakage Current: 10µA (Max.) @ V
DS
= 100V
Lower R
DS(ON)
: 0.336Ω (Typ.)
IRLW/I510A
BV
DSS
= 100 V
R
DS(on)
= 0.44Ω
I
D
= 5.6 A
D
2
-PAK
2
I
2
-PAK
1
1
3
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25°C)
Continuous Drain Current (T
C
=100°C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25°C) *
Total Power Dissipation (T
C
=25°C)
Linear Derating Factor
T
J
, T
STG
T
L
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
(2)
(1)
(1)
(3)
(1)
Value
100
5.6
4.0
20
±20
62
5.6
3.7
6.5
3.8
37
0.25
- 55 to +175
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
300
Thermal Resistance
Symbol
R
θJC
R
θJA
R
θJA
Characteristic
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
4.1
40
62.5
°C/W
Units
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
©1999 Fairchild Semiconductor Corporation
1

IRLW510A Related Products

IRLW510A IRLI510A IRLWI510A
Description ADVANCED POWER MOSFET ADVANCED POWER MOSFET Advanced Power MOSFET
Is it Rohs certified? incompatible incompatible -
Maker Fairchild Fairchild -
Parts packaging code D2PAK TO-262AA -
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 -
Contacts 3 3 -
Reach Compliance Code unknown unknown -
ECCN code EAR99 EAR99 -
Avalanche Energy Efficiency Rating (Eas) 62 mJ 62 mJ -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage 100 V 100 V -
Maximum drain current (Abs) (ID) 5.6 A 5.6 A -
Maximum drain current (ID) 5.6 A 5.6 A -
Maximum drain-source on-resistance 0.44 Ω 0.44 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JEDEC-95 code TO-263AB TO-262AA -
JESD-30 code R-PSSO-G2 R-PSIP-T3 -
JESD-609 code e0 e0 -
Number of components 1 1 -
Number of terminals 2 3 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE -
Maximum operating temperature 175 °C 175 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE IN-LINE -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type N-CHANNEL N-CHANNEL -
Maximum power dissipation(Abs) 37 W 37 W -
Maximum pulsed drain current (IDM) 20 A 20 A -
Certification status Not Qualified Not Qualified -
surface mount YES NO -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Terminal form GULL WING THROUGH-HOLE -
Terminal location SINGLE SINGLE -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
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