PHOTOMULTlPLlER TUBES
R2693, R2693P
Transmission Mode Low Noise Bialkali Photocathode
28mm (1-1/8 inch) Diameter, Side-on Type
FEATURES
Low Dark Current
Low Dark Counts (R2693P)
Wide Photocathode
Excellent Spatial Uniformity
Fast Time Response
APPLICATIONS
Fluorescence Detector
Chemiluminescence Detector
Raman Spectroscopy
Emission Spectroscopy
Light Scattering Detector
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
MateriaI
Minimum Effective Area
Window Material
Dynode
Structure
Number of Stages
Direct Interelectrode Capacitances
Anode to Last Dynode
Anode to All Other Electrodes
Base
SuitabIe Socket
Applicable Socket Assembly
Description
185 to 650
375
Low noise bialkali
16(H) 18(W)
UV glass
Circular-cage
9
1.2
3.4
11-pin base
JEDEC No. B11-88
E678–11A (option)
E717–21 (option)
Unit
nm
nm
Figure 1:
Electron Trajectories
LIGHT
mm
PHOTOELECTRONS
PHOTOCATHODE
GLASS
BULB
pF
pF
2nd DYNODE
FOCUSING
ELECTRODES
1st DYNODE
3rd DYNODE
TPMSC0003EB
Figure 2:
Typical Spatial Uniformity
X-Axis
RELATIVE SENSITIVITY (%)
100
80
60
40
20
0
8
4
0
4
8
9
4.5
0
4.5
9
Y-Axis
100
80
60
40
20
0
Y
SPOTSIZE : 1mm DIA
SUPPLY VOLTAGE : 1000V
WAVELENGTH : 400nm
X
DISTANCE FROM CENTER OF
PHOTOCATHODE (mm)
DISTANCE FROM CENTER OF
PHOTOCATHODE (mm)
TPMSB0066EA
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1993 Hamamatsu Photonics K.K.
RELATIVE SENSITIVITY (%)
PHOTOMULTlPLlER TUBES R2693, R2693P
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Average Anode Current
Ambient Temperature
Between Anode and Cathode
Between Anode and Last Dynode
A
Value
1250
250
0.1
–80 to +50
Unit
Vdc
Vdc
mA
CHARACTERISTlCS (at 25
Parameter
Cathode
Sensitivity
Anode
Sensitivity
Gain
D
)
R2693
for General Purpose
Min.
Typ.
Max.
30
20.5
50
62
7.0
300
3.7 10
5
6 10
6
0.5
5.0
R2693P
for Photon Counting
Min.
Typ.
Max.
30
20.5
50
62
7.0
300
3.7 10
5
6 10
6
0.1
15
2.0
50
Unit
%
A/lm
mA/W
A/lm-b
A/lm
A/W
Quantum Efficiency at 375nm
Luminous
B
Radiant at 375nm (Peak)
Blue
C
Luminous
D
Radiant at 375nm
100
100
Anode Dark Current
E
(After 30min. storage in darkness)
Anode Dark Counts
E
ENI(Equivalent Noise Input)
F
D
nA
cps
W
ns
ns
ns
%
%
8.6
G
H
J
Time Response
Anode Current
Stability
K
Anode Pulse Rise Time
Electron Transit Time
Current Hysteresis
Voltage Hysteresis
Transit Time Spread (FWHM)
10
-17
1.2
18
1.0
0.5
1.0
3.9
10
-17
1.2
18
1.0
0.5
1.0
NOTES
A: Averaged over any interval of 30 seconds maximum.
B: The light source is a tungsten filament lamp operated at a
distribution temperature of 2856K. Supply voltage is 100 volts
between the cathode and all other electrodes connected together
as anode.
C: The value is cathode output current when a blue filter(Corning
CS-5-58 polished to 1/2 stock thickness) is interposed
between the light source and the tube under the same condition
as Note B.
D: Measured with the same light source as Note B and with the
voltage distribution ratio shown in Table 1 below.
Table 1:Voltage Distribution Ratio
G:The rise time is the time for the output pulse to rise from 10%
to 90% of the peak amplitude when the entire photocathode is
illuminated by a delta function light pulse.
H: The electron transit time is the interval between the arrival of
delta function light pulse at the entrance window of the tube and
the time when the anode output reaches the peak amplitube. In
measurement, the whole photocathode is illuminated.
J: Also called transit time jitter. This is the fluctuation in electron
transit time between individual pulses in the single photoelectron
mode, and may be defined as the FWHM of the frequency
distribution of electron transit times.
K: Hysteresis is temporary instability in anode current after light and
voltage are applied.
Hysteresis =
lmax.
li
lmin.
100(%)
R2693
Electrodes
Ratio
Electrodes
Ratio
K Dy1 Dy2 Dy3
• • • •
Dy9 P
1
1
1
••••••••
1 1
K Dy1 Dy2 Dy3
• • • •
Dy9 P
2.5 1.5 1
• • • • • • • •
1 1
R2693P
ANODE
CURRENT
SuppIy Voltage : 1000Vdc, K : Cathode,Dy : Dynode, P : Anode
li
l max.
l min.
TIME
E: Measured with the same supply voltage and voltage distribution
ratio as Note D after removal of light.
F: ENI is an indication of the photon-limited signal-to-noise ratio. It
refers to the amount of light in watts to produce a signal-to-noise
ratio of unity in the output of a photomultiplier tube.
ENI =
where
2q.ldb.G.
S
q = Electronic charge (1.60 10
-19
coulomb).
ldb = Anode dark current(after 30 minutes storage)
in amperes.
G = Gain.
f = Bandwidth of the system in hertz. 1 hertz is used.
S = Anode radiant sensitivity in amperes per watt at the
wavelength of peak response.
f
0
5
6
7 (minutes)
TPMSB0002EA
(1)Current Hysteresis
The tube is operated at 750 volts with an anode current of 1 micro-
ampere for 5 minutes. The light is then removed from the tube for a
minute. The tube is then re-illuminated by the previous light level
for a minute to measure the variation.
(2)Voltage Hysteresis
The tube is operated at 300 volts with an anode current of 0.1 micro
-ampere for 5 minutes. The light is then removed from the tube and
the supply voltage is quickly increased to 800 volts. After a minute,
the supply voltage is then reduced to the previous value and the
tube is re-illuminated for a minute to measure the variation.
Figure 3:
Typical Spectral Response
100
TPMSB0060EA
Figure 4:
Typical Time Response
200
TPMSB0061EA
CATHODE
RADIANT
SENSITIVITY
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
100
80
60
10
QUANTUM
EFFICIENCY
TIME (ns)
40
TRAN
SIT TIM
20
E
1
10
8
6
0.1
4
2
RISE
300
500
700
TIME
1000
1500
0.01
1
200
400
600
800
WAVELENGTH (nm)
SUPPLY VOLTAGE (V)
Figure 5:
Typical Gain and Anode Dark Current (R2693)
10
8
TPMSB0062EA
Figure 6:
Typical Single Photoelectron Pulse Height
Distribution (R2693P)
1.0
TPMSB0063EA
10
–5
10
7
10
–6
FULL SCALE(SIGNAL
+
DARK):1 10
4
FULL SCALE(DARK)
:1 10
3
0.8
ANODE DARK CURRENT(A)
10
6
10
–7
COUNTS PER CHANNEL
SIGNAL DARK
+
10
5
GAIN
G
N
AI
0.6
10
–8
AR
K
C
U
R
R
10
4
EN
T
0.4
10
–9
WAVELENGTH OF INCIDENT LIGHT
: 400nm
SUPPLY VOLTAGE
: 1000vdc
SIGNAL+DARK COUNTS : 5364cps
DARK COUNTS
: 15cps
AMBIENT TEMPERATURE :
+
25
AN
O
D
E
10
3
10
–10
D
0.2
DARK
10
2
10
–11
0
0
200
400
600
800
1000
CHANNEL NUMBER(ch)
DISCRIMINATION LEVEL
10
1
300
400
500
600
800
1000
10
–12
1300
SUPPLY VOLTAGE(V)
Figure 7:
Typical Temperature Coefficient
of Anode Sensitivity
+
1.2
+
0.8
)
TEMPERATURE COEFFICIENT(%/
TPMSB0064EA
Figure 8:
Typical Temperature Characteristics
of Dark Current(R2693)
(at 1000V, after 30minutes storage)
100
TPMSB0065EA
10
+
0.4
0
ANODE DARK CURRENT (nA)
1
–0.4
0.1
–0.8
–1.2
200
300
400
500
600
700
0.01
0
20
40
60
TEMPERATURE (°C)
80
100
WAVELENGTH (nm)
PHOTOMULTlPLlER TUBES R2693, R2693P
Figure 9:
Dimensional Outline and Basing Diagram (Unit: mm)
29.0
1.7
18MIN.
PHOTOCATHODE
16MIN.
76MAX.
90MAX.
2.5
DY5
DY4 4
DY3 3
DY2
2
5
DY6
6
7
DY7
8 DY8
9 DY9
10 P
49.0
1
11
K
DY1
DIRECTION OF LIGHT
34MAX.
HA COATING
11 PIN BASE
JEDEC No. B11-88
BOTTOM VIEW
(BASING DIAGRAM)
TPMSA0007EA
Figure 10: Optional Accessories
(Unit: mm)
Socket E678-11A
49
38
33.0 0.3
3.5
5
D Type Socket Assembly E717-21
PMT
P
R10
DY9
38.0 0.3
49.0 0.3
DY8
DY7
DY6
DY5
31.0 0.5
HOUSING
(INSULATOR)
POTTING
COMPOUND
DY4
DY3
DY2
DY1
K
9
R9
8
R8
7
R7
6
5
4
R4
3
R3
450 10
2
R2
1
R1
11
–
HV
SOCKET
PIN No.
10
C3
C2
C1
SIGNAL GND
SIGNAL OUTPUT RG-174/U
(BLACK)
POWER SUPPLY GND
AWG22 (BLACK)
3.5
33
29
4.8
R6 R to R10 : 330k
C1 to C3 : 0.01 F
R5
5
29
4
41.0 0.5
AWG22 (VIOLET)
18
R
1
to R
10
: 330k
C
1
to C
3
: 0.01 F
TACCA0002ED
TACCA0008EB
Hamamatsu also provides C4900 series compact high voltage
power supplies and C6270 series DP type socket assemblies
which incorporate a DC to DC converter type high voltage
power supply.
Warning–Personal Safety Hazards
Electrical Shock–Operating voltages applied to
this device present a shock hazard.
HAMAMATSU PHOTONICS K.K., Electoron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.:
Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218
Germany:
Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France:
Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
United Kingdom:
Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384
North Europe:
Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95
Italy:
Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741
TPMS1014E01
MAR. 1993
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