R1800F datasheet, PDF - EEWORLD Datasheet

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R1800F: Description0.5 A, 1800 V, SILICON, SIGNAL DIODE, DO-41; CategoryDiscrete semiconductor diode; File Size25KB，2 Pages; ManufacturerFORMOSA; Websitehttp://www.formosams.com/

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R1800F Overview

0.5 A, 1800 V, SILICON, SIGNAL DIODE, DO-41

R1800F Parametric

Parameter Name	Attribute value
Maker	FORMOSA
Reach Compliance Code	unknow
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	2 V
Maximum non-repetitive peak forward current	30 A
Number of components	1
Maximum operating temperature	175 °C
Maximum output current	0.5 A
Maximum repetitive peak reverse voltage	1800 V
Maximum reverse recovery time	0.5 µs
surface mount	NO

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R1200F

THRU

R2500F

HIGH VOLTAGE FAST RECOVERY RECTIFIERS

VOLTAGE RANGE

1200 to 2500 Volts

CURRENT

FEATURES

* Low forward voltage drop

* High current capability

* High reliability

* High surge current capability

500 & 200 m Ampere

DO-41

.107(2.7)

.080(2.0)

DIA.

1.0(25.4)

MIN.

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: UL 94V-0 rate flame retardant

* Lead: Axial leads, solderable per MIL-STD-202,

method 208 guranteed

* Polarity: Color band denotes cathode end

* Mounting position: Any

* Weight: 0.34 grams

.205(5.2)

.166(4.2)

.034(.9)

.028(.7)

DIA.

1.0(25.4)

MIN.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

.375"(9.5mm) Lead Length at Ta=50 C

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Instantaneous Forward Voltage at 0.5A/0.2A D.C.

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Ta=100 C

Maximum Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Operating and Storage Temperature Range T

J

, T

STG

NOTES:

R1200F

1200

840

1200

R1500F R1600F

1500

1050

1500

500

1600

1120

1600

R1800F

1800

1260

1800

R2000F R2500F UNITS

2000

1400

2000

200

2500

1750

2500

V

mA

A

V

mA

nS

pF

C

30

2.0

5.0

100

500

40

-65 +175

3.0

1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A

2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

R1800F Related Products

	R1800F	R2500F	R2000F	R1600F	R1500F	R1200F
Description	0.5 A, 1800 V, SILICON, SIGNAL DIODE, DO-41	0.2 A, 2500 V, SILICON, SIGNAL DIODE, DO-41	0.5 A, 2000 V, SILICON, SIGNAL DIODE, DO-41	0.2 A, 2500 V, SILICON, SIGNAL DIODE, DO-41	0.5 A, SILICON, SIGNAL DIODE, DO-41	0.5 A, 1200 V, SILICON, SIGNAL DIODE, DO-41
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	2 V	3 V	3 V	2 V	2 V	2 V
Maximum non-repetitive peak forward current	30 A	30 A	30 A	30 A	30 A	30 A
Number of components	1	1	1	1	1	1
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Maximum output current	0.5 A	0.2 A	0.2 A	0.5 A	0.5 A	0.5 A
Maximum repetitive peak reverse voltage	1800 V	2500 V	2000 V	1600 V	1500 V	1200 V
Maximum reverse recovery time	0.5 µs	0.5 µs	0.5 µs	0.5 µs	0.5 µs	0.5 µs
surface mount	NO	NO	NO	NO	NO	NO
Maker	FORMOSA	FORMOSA	-	FORMOSA	FORMOSA	FORMOSA

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