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R1800

Description
0.5 A, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size41KB,2 Pages
ManufacturerGood-Ark
Websitehttp://www.goodark.com/
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R1800 Overview

0.5 A, SILICON, SIGNAL DIODE, DO-41

R1200 THRU R2000
HIGH VOLTAGE SILICON RECTIFIER
Reverse Voltage -
1200 to 2000 Volts
Forward Current -
0.2 to 0.5 Ampere
Features
Low cost
Low leakage
Low forward voltage drop
High current capability
Mechanical Data
Case:
Molded plastic
Epoxy:
UL94V-0 rate flame retardant
Lead:
MIL-STD-202 method 208C guaranteed
Mounting Position:
Any
Weight:
0.012 ounce, 0.335 gram
DIM ENSIONS
DIM
A
B
C
D
inches
Min.
0.165
0.079
0.028
1.000
Max.
0.205
0.106
0.034
-
Min.
4.2
2.0
0.71
25.40
mm
Max.
5.2
2.7
0.86
-
Note
Maximum Ratings and Electrical Characteristics
Ratings at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbols
R1200
R1500
R1800
R2000
Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=50
Peak forward surge current
8.3mS single half sine-wave superimposed
on rated load (MIL-STD-750D 4066 method)
Maximum instantaneous forward voltage at 0.5/0.2A DC
Maximum full load reverse current average, full cycle
0.375" (9.5mm) lead length at T
L
=75
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25
T
A
=100
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R(AV)
I
R
C
J
T
J
, T
STG
1200
840
1200
1500
1050
1500
500
30.0
2.0
30.0
5.0
50.0
30.0
1800
1260
1800
2000
1400
2000
200
Volts
Volts
Volts
mAmps
Amps
3.0
Volts
A
A
F
Typical junction capacitance (Note 1)
Operating and storage temperature range
Note:
(1) Measured at 1.0MHz and applied reverse voltage of 4.0 volts
-65 to +175
1

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R1800 R1500
Description 0.5 A, SILICON, SIGNAL DIODE, DO-41 0.5 A, 1500 V, SILICON, SIGNAL DIODE, DO-41
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