KA5H0265R
S P S
The SPS product family is specially designed for an off-line SMPS
with minimal external components. The SPS consist of high voltage
power SenseFET and current mode PWM IC.
Included PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/turn-
off driver, thermal shut down protection, over voltage protection, and
temperature compensated precision current sources for loop
compensation and fault protection circuitry. Compared to discrete
MOSFET and controller or RCC switching converter solution, a SPS
can reduce total component count, design size, weight and at the
same time increase efficiency, productivity, and system reliability.
It has a basic platform well suited for cost-effective design in either a
flyback converter or a forward converter.
TO -22 0F -4L
S P S
1. GND 2. Drain 3. Vcc 4. FB
FEATURES
•
•
•
•
•
•
•
•
Precision fixed operating frequency (100kHz)
Pulse by pulse current limiting
Over current protection
Over voltage protection (Min. 25V)
Internal thermal shutdown function
Under voltage lockout
Internal high voltage sense FET
Auto-restart mode
ORDERING INFORMATION
Device
KA5H0265R
Package
TO-220F-4L
Topr (°C)
°
−25°C
to +85°C
BLOCK DIAGRAM
DRAIN
uA
THERMAL S/D
7.5V
!
REV. B
1999 Fairchild Semiconductor Corporation
KA5H0265R
ABSOLUTE MAXIMUM RATINGS
Characteristic
Drain-source (GND) voltage
(1)
Drain-Gate voltage (R
GS
=1MΩ)
Gate-source (GND) voltage
Drain current pulsed
(2)
Single pulsed avalanche energy
(3)
Avalanche current
(4)
Continuous drain current (T
C
=25°C)
Continuous drain current (T
C
=100°C)
Supply voltage
Analog input voltage range
Total power dissipation
V
DSS
V
DGR
V
GS
I
DM
E
AS
I
AS
I
D
I
D
V
CC
V
FB
P
D
(wt H/S)
Derating
Operating temperature
Storage temperature
T
OPR
T
STG
Symbol
Value
650
650
±30
8.0
68
8
2.0
1.3
30
−0.3
to V
SD
42
0.33
−25
to +85
−55
to +150
S P S
Unit
V
V
V
A
DC
mJ
A
A
DC
A
DC
V
V
W
W/°C
°C
°C
NOTES:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=51mH, starting Tj=25°C
4. L=13uH, starting Tj=25°C
KA5H0265R
ELECTRICAL CHARACTERISTICS (SFET part)
(Ta=25°C unless otherwise specified)
Characteristic
Drain-source breakdown voltage
Zero gate voltage drain current
Symbol
BV
DSS
I
DSS
Test condition
V
GS
=0V, I
D
=50µA
V
DS
=Max., Rating, V
GS
=0V
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125°C
Static drain-source on resistance
(note)
R
DS(ON)
Forward transconductance
(note)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate-source charge
Gate-drain (Miller) charge
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
DD
=0.5BV
DSS
, I
D
=1.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
=10V, I
D
=1.0A,
V
DS
=0.5BV
DSS
(MOSFET
switching time are
essentially independent of
operating temperature)
V
GS
=10V, I
D
=0.5A
V
DS
=50V, I
D
=0.5A
V
GS
=0V, V
DS
=25V,
f=1MHz
Min.
650
−
−
−
1.5
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
5.0
2.5
550
38
17
20
15
55
25
−
3
12
S P S
Max.
−
50
200
6.0
−
−
−
−
−
−
−
−
35
−
−
Unit
V
µA
µA
Ω
S
pF
nS
nC
NOTE:
Pulse test: Pulse width
≤
300µS, duty cycle
≤
2%
KA5H0265R
ELECTRICAL CHARACTERISTICS (Control part)
(Ta=25°C unless otherwise specified)
Characteristic
REFERENCE SECTION
Output voltage
(1)
Temperature Stability
(1)(2)
OSCILLATOR SECTION
Initial accuracy
F
OSC
Ta=25°C
−25°C≤Ta≤+85°C
−
90
−
100
±5
Vref
Vref/∆T
Ta=25°C
−25°C≤Ta≤+85°C
4.80
−
5.00
0.3
Symbol
Test condition
Min.
Typ.
S P S
Max.
Unit
5.20
0.6
V
mV/°C
110
±10
kHz
%
Frequency change with temperature
(2)
∆F/∆T
PWM SECTION
Maximum duty cycle
FEEDBACK SECTION
Feedback source current
Shutdown delay current
I
FB
Idelay
Dmax
64
67
70
%
Ta=25°C, 0V<Vfb<3V
Ta=25°C, 5V≤Vfb≤V
SD
Max. inductor current
−
After turn on
0.7
4
0.9
5
1.1
6
mA
µA
OVER CURRENT PROTECTION SECTION
Over current protection
UVLO SECTION
Start threshold voltage
Minimum operating voltage
TOTAL STANDBY CURRENT SECTION
Start current
Operating supply current
(control part only)
SHUTDOWN SECTION
Shutdown Feedback voltage
Thermal shutdown temperature (Tj)
(1)
Over voltage protection
V
SD
T
SD
V
OVP
V
CC
>24V
Vfb>6.5V
−
6.9
140
25
7.5
160
27
8.1
−
29
V
°C
V
I
ST
I
OPR
V
CC
=14V
V
CC
<28
−
−
100
7
170
12
mA
mA
Vth(H)
Vth(L)
14
8.4
15
9
16
9.6
V
V
I
L
(max)
1.05
1.2
1.35
A
NOTES:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
KA5H0265R
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
www.fairchildsemi.com
12/28/99 0.0m 001
Stock#DSxxxxxxxx
1999 Fairchild Semiconductor Corporation
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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